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Process Routes for Low Defect-Density GaN on Various Substrates Employing Pendeo-Epitaxial Growth Techniques

Published online by Cambridge University Press:  15 February 2011

K.J. Linthicum ,
T. Gehrke ,
D.B. Thomson ,
K.M. Tracy ,
E.P. Carlson ,
T. P. Smith ,
T.S. Zheleva ,
C.A. Zorman ,
M. Mehregany  and
R.F. Davis
K.J. Linthicum
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27965, KevinLinthicum@NCSU.EDU
T. Gehrke
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27965, KevinLinthicum@NCSU.EDU
D.B. Thomson
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27965, KevinLinthicum@NCSU.EDU
K.M. Tracy
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27965, KevinLinthicum@NCSU.EDU
E.P. Carlson
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27965, KevinLinthicum@NCSU.EDU
T. P. Smith
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27965, KevinLinthicum@NCSU.EDU
T.S. Zheleva
Affiliation:
U.S. Army Research Laboratory, AMSRL-SE-EM, Adelphi, MD 20783
C.A. Zorman
Affiliation:
Department of Electrical, Systems and Computer Engineering and Science, Case Western Reserve University, Cleveland, OH 44106
M. Mehregany
Affiliation:
Department of Electrical, Systems and Computer Engineering and Science, Case Western Reserve University, Cleveland, OH 44106
R.F. Davis
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27965, KevinLinthicum@NCSU.EDU
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Abstract

GaN films have been grown on 6H-SiC substrates employing a new form of selective lateral epitaxy, namely pendeo-epitaxy. This technique forces regrowth to start exclusively on sidewalls of GaN seed structures. Both discrete pendeo-epitaxial microstructures and coalesced single crystal layers of GaN have been achieved. SEM and TEM analysis are used to evaluate the morphology of the resulting GaN films. Process routes leading to GaN pendeo-epitaxial growth using silicon substrates have also been achieved and the preliminary results are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 537: Symposium G – GaN and Related Alloys , 1998 , G4.9
Copyright
Copyright © Materials Research Society 1999

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References

1. Underwood, R., Kapolnek, D., Keller, B., Keller, S., Denbaars, S., and Mishra, U., Topical Workshop on Nitrides, Nagoya, Japan, September, 1995.Google Scholar
2. Kato, Y., Kitamura, S., Hiramatsu, K., and Sawaki, N., J. Cryst. Growth, 144, 133 (1994).Google Scholar
3. Nam, O., Bremser, M., Ward, B., Nemanich, R., and Davis, R., Mat.Res. Soc. Symp. Proc., 449, 107 (1997).Google Scholar
4. Nam, O., Bremser, M., Ward, B., Nemanich, R., and Davis, R., Jpn. J. Appl. Phys., Part 1 36, L532 (1997).Google Scholar
5. Sakai, A., Sunakawa, H., and Usui, A., Appl. Phys. Lett., 73, 481 (1998).Google Scholar
6. Marchand, H., Wu, X., Ibbetson, J., Fini, P., Kozodoy, P., Keller, S., Speck, J., Denbaars, S., and Mishra, U., Appl. Phys. Lett., 73, 747 (1998).Google Scholar
7. Zheleva, T., Nam, O., Bremser, M., and Davis, R., Appl. Phys. Lett., 71, 2472 (1997).Google Scholar
8. Nam, O., Zheleva, T., Bremser, M., and Davis, R., Appl. Phys. Lett., 71, 2638 (1997).Google Scholar
9. Zhong, H., Johnson, M., McNulty, T., Brown, J., Cook, J. Jr, Schezina, J., Materials Internet Journal, Nitride Semiconductor Research, 3, 6, (1998).Google Scholar
10. Nakamura, S., Senoh, M., Nagahama, S., Iwasa, N., Yamanda, T., Matsushita, T., Kiyoku, H., Sugimoto, Y., Kozaki, T., Umemoto, H., Sano, M., and Chocho, K., Proc. of the 2 nd Int. Conf. On Nitride Semicond., Tokushima, Japan, October, 1997 Google Scholar
11. Zheleva, T., Smith, S., Thomson, D., Linthicum, K., Gerhke, T., Rajagopal, P., Davis, R., (submitted to the Journal of Electronic Materials).Google Scholar
12. Linthicum, K., Gehrke, T., Thomson, D., Carlson, E., Rajagopal, P., Smith, T., Davis, R., (submitted to Applied Physics Letters).Google Scholar
13. Weeks, T., Bremser, M., Ailey, K., Carlson, E., Perry, W., and Davis, R., Appl. Phys. Lett., 67, 401 (1995).Google Scholar
14. Zorman, C., Fleischman, A., Dewa, A., Mehregany, M., Jacob, C., Nishino, S., and Pirouz, P., J. Appl. Phys., 78, 5136 (1995)Google Scholar
15. Gehrke, T., Linthicum, K., Thomson, D., Rajagopal, P., Batchelor, A., Davis, R., Mat. Res. Soc. Symp., this volume.Google Scholar
16. Thomson, D., Gehrke, T., Linthicum, K., Rajagopal, P., Zheleva, T., Davis, R., Mat. Res. Soc. Symp., this volume.Google Scholar
17. Zheleva, T., et.al., Mat. Res. Soc. Symp., this volume.Google Scholar