Hostname: page-component-8448b6f56d-dnltx Total loading time: 0 Render date: 2024-04-24T01:51:49.728Z Has data issue: false hasContentIssue false
  • English
  • Français

Growth and Characterization of Thermoelectric Mg2Si Thin Films

Published online by Cambridge University Press:  25 July 2011

Thomas C. Hasapis ,
Eleni C. Stefanaki ,
Anastasios Siozios ,
Euripides Hatzikraniotis ,
George Vourlias ,
Panagiotis Patsalas  and
Konstantinos M. Paraskevopoulos
Thomas C. Hasapis
Affiliation:
Physics Department, Aristotle University of Thessaloniki, GR- 54124, Thessaloniki, Greece
Eleni C. Stefanaki
Affiliation:
Physics Department, Aristotle University of Thessaloniki, GR- 54124, Thessaloniki, Greece
Anastasios Siozios
Affiliation:
Department of Materials Science and Engineering, University of Ioannina, GR-45110, Ioannina, Greece
Euripides Hatzikraniotis
Affiliation:
Physics Department, Aristotle University of Thessaloniki, GR- 54124, Thessaloniki, Greece
George Vourlias
Affiliation:
Physics Department, Aristotle University of Thessaloniki, GR- 54124, Thessaloniki, Greece
Panagiotis Patsalas
Affiliation:
Department of Materials Science and Engineering, University of Ioannina, GR-45110, Ioannina, Greece
Konstantinos M. Paraskevopoulos
Affiliation:
Physics Department, Aristotle University of Thessaloniki, GR- 54124, Thessaloniki, Greece
Get access

Abstract

In this work, room temperature co-deposition of Mg and Si was used to successfully fabricate Mg2Si thin films on Si substrate by dual cathode magnetron sputtering (DCMS). Films were annealed at 380°C. Various Mg/Si sputtering power ratios have been examined. XRD, SEM and IR reflectivity measurements on grown and annealed films, reveal that annealing is enhancing the formation of crystalline Mg2Si.

Keywords

nanostructurethermoelectricitythin film
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1325: Symposium E – Energy Harvesting—Recent Advances in Materials, Devices and Applications , 2011 , mrss11-1325-e06-07
Copyright
Copyright © Materials Research Society 2011

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Mahan, J.E., Vantomme, A. and Langouche, G., Phys. Rev., B 54, 16965 (1996)Google Scholar
2.(a)Zaitsev, V. K., Fedorov, M. I., Gurieva, E. A., Eremin, I. S., Konstantinov, P. P., Samunin, A. Yu. and Vedernikov, M. V., Physical Review B 74, 045207 (2006) (b) J.-I. Tani and H. Kido, Physica B 364, 218(2005) Google Scholar
3. Akasaka, M., Iida, T., Matsumoto, A., Yamanaka, K., Takanashi, Y., Imai, T. and Hamada, N., Journal of Applied Physics, 104, art. no. 013703, (2008)Google Scholar
4. Nemoto, T., Akasaka, M., Iida, T., Sato, J., Nishio, K., Takei, T. and Takanashi, Y., Proceedings of the 25th International Conference on Thermoelectrics ICT’06, p. 552 (2006)Google Scholar
5. Song, R.B, Liu, Y.Z. and Aizawa, T., Phys. Stat. Solidi - Rapid Research Letters, 1, 226 (2007)Google Scholar
6. Tani, J. and Kido, H., Intermetallics, 15, 1202 (2007)Google Scholar
7. Chu, W.K., Lau, S.S., Mayer, J.W., Muller, H. and Tu, K.N., Thin Solid Films, 25, 395 (1975)Google Scholar
8. Janega, P.L., McCaffrey, J., Landheer, D., Buchanan, M., Denhoff, M. and Mitchel, D., Appl. Phys. Lett. 53, 2056 (1988)Google Scholar
9. Vantomme, A., Mahan, J.E., Langouche, G., Becker, J.P., Van Bael, M., Temst, K. and Van Haesendonck, C., Appl. Phys. Lett, 70, 1086 (1997)Google Scholar
10. Vantomme, A., Langouche, G., Mahan, J.E. and Becker, J.P., Microelectr. Eng. 50, 242 (2000)Google Scholar
11. Tompa, G.S., Li, Y.B., Agassi, D., Kim, S.I. and Hong, S.K., J. Electr.Mat. 25, 926 (1996)Google Scholar
12. Xiao, Q-Q., Xie, Q., Zhao, K-J. and Yu, Z-Q., Adv. Mat. Res. 129–131, 290 (2010)Google Scholar
13. Angelakeris, M., Vourlias, G., Hatzikraniotis, E., Siozios, A., Patsalas, P. and Paraskevopoulos, K.M., Proceedings of the 8th European Conference on Thermoelectrics, ed. Codecasa, M., Como, Italy, p. 258 (2010).Google Scholar
14. Hwang, B-H., Appl. Phys. 34, 2469 (2001)Google Scholar
15. Cullity, B.D. and Stock, S.R., Elements of X-Ray Diffraction, Addison - Wesley (1956)Google Scholar
16. Tani, J., Takahashi, M. and Kido, H. IOP Conf. Series: Mat.Scie.Engin. 18, 142013 (2011)Google Scholar
17. Xi-Na, Wang, Yong, Wang, Jin, Zou, Tian-Chong, Zhang, Zeng-Xia, Mei, Yang, Guo, Qi-Kun, Xue, Xiao-Long, Du, Xiao-Na, Zhang, Xiao-Dong, Han and Ze, Zhang, Chinese Phys. B 18 3079 (2009)Google Scholar
18..(a)McWilliams, D. and Lynch, W., Phys. Rev. 130, 2248 (1963) (b)J-I. Tani and H. Kido, Comp. Mater. Sc. 42, 531 (2008) Google Scholar
19. Hofmeister, A. M., Keppel, E. and Speck, A. K., R. Astron. Soc., 345, 16 (2003)Google Scholar
20.(a)Ocafia, M., Serna, C.J., Garcia-Ramos, J.V. and Matijevi, E., Solid States lonics 63–65, 170 (1993) (b) S. Hayashi and H. Kanamori, J. Phys. C: Solid State Phys. 13, 1529 (1980) Google Scholar