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Rapid Thermal Annealing of B or N Implanted Monocrystalline 1-SiC Thin Films and its Effect on Electrical Properties and Device Performance

Published online by Cambridge University Press:  26 February 2011

Jae Ryu ,
H. J. Kim  and
R. F. Davis
Jae Ryu
Affiliation:
North Carolina State University, Materials Engineering Dept. Box 7907, Raleigh, NC 27695-7907
H. J. Kim
Affiliation:
North Carolina State University, Materials Engineering Dept. Box 7907, Raleigh, NC 27695-7907
R. F. Davis
Affiliation:
North Carolina State University, Materials Engineering Dept. Box 7907, Raleigh, NC 27695-7907
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Abstract

The annealing behavior of B or N dual implants in 1-SiC thin films has been studied using cross-sectional transmission electron microscopy (XTEM), secondary ion mass spectroscopy (SIMS), and four point probe electrical measurements. A high resistivity layer was produced after annealing the B implanted-amorphous layer in the temperature range from 1000°C to 1500°C for 300 a; however, the resistivity rapidly decreased as a result of annealing at higher temperatures. The reasons for these changes in resistivity and the lack of p-type conduction at all annealing temperatures in these B implants include: (1) possible compensation of the native n-type carriers, (2) reduction in the B concentration via formation of B-containing precipitates between 1300°C and 1600°C and out diffusion of this species at and above 1600°C, and (3) creation of additional n-type carriers.

No precipitates or defect structure was observed in N implanted-annealed samples. The resistivity of this non amorphous n-type layer decreased with increasing annealing temperatures from 700°C to 1800°C. Furthermore n-p junction diodes were fabricated for the first time in β-SiC via N implantation into samples previously in situ doped with 8 × 1018/cm3 Al coupled with rapid thermal annealing at 1200°C for 300 a. A typical diode ideality constant and a saturation current for these diodes was 3.4 and 9 × 10-10 A/cm2, respectively.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 52: Symposium B – Rapid Thermal Processing , 1985 , 165
Copyright
Copyright © Materials Research Society 1986

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