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Raman Analysis Of AlxGa1-xN Films

Published online by Cambridge University Press:  10 February 2011

Leah Bergman ,
Mitra Dutta ,
Michael D. Bremser ,
Ok-Hyun Nam ,
William G. Perry ,
Dimitri Alexon ,
Robert F. Davis ,
Cengiz M. Balkas  and
Robert J. Nemanich
Leah Bergman
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695-8202
Mitra Dutta
Affiliation:
US Army Research Office, Research Triangle Park, NC 27709-12211
Michael D. Bremser
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695
Ok-Hyun Nam
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695
William G. Perry
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695
Dimitri Alexon
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695-8202
Robert F. Davis
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695
Cengiz M. Balkas
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695
Robert J. Nemanich
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695-8202
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Abstract

Raman analysis of the E2 mode of AlxGal-xN in the composition range 0 ≤ x ≤ 1 is presented. The lineshape was observed to exhibit a significant asymmetry and broadening toward the high energy range. The spatial correlation model is discussed, and is shown to account for the lineshape. The model calculations also indicate the lack of a long-range order in the CVD (chemical vapor deposition) alloys. These results were confirmed by X-ray scattering: the relative intensity of the superlattice line was found to be negligible. The line broadening of the E2 mode was found to exhibit a maximum at a composition x∼0.5 indicative of a random disordered alloy system. The stress state of the alloys was found to be tensile and was attributed to the difference in the thermal expansion coefficients of the SiC substrate and the film.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 543
Copyright
Copyright © Materials Research Society 1998

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