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Impurity Incorporation During Si Ultrafast Solidification to the Crystalline and Amorphous Phase

Published online by Cambridge University Press:  25 February 2011

Salvatore Ugo Campisano
Salvatore Ugo Campisano*
Affiliation:
Dipartimento di Fisica dell'Università, Corso Italia 57, 95129 Catania, Italy
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Abstract

Impurity segregation at the liquid-solid interface, interfacial instabilities due to constitutional supercooling and precipitation are compared for the growth of a crystalline or of an amorphous phase from rapid solidification. Segregation at low concentration and interfacial instabilities at high concentrations are shown to give the same information. The impurity behaviour shows a distinct similarity between the crystalline and amorphous phases.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 35: Symposium A – Energy Beam-Solid Interactions and Transient Thermal Processing/1984 , 1984 , 145
Copyright
Copyright © Materials Research Society 1985

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References

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