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Stress and Electromigration in Thin Film Metallisation

Published online by Cambridge University Press:  15 February 2011

C. A. Ross
C. A. Ross*
Affiliation:
Harvard University, Division of Applied Sciences, Cambridge, MA 02138
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Abstract

This paper reviews the experimentally established relationship between electromigration and mechanical stress in thin films. A model will be described which calculates the development of stress around sites of electromigration flux divergence in a metallisation track and it is shown how the model can be used to predict the time before electromigration damage occurs. The effect of passivation on the stress state within a metal track is discussed and the behaviour of metallisation under pulsed current testing is interpreted in terms of mechanical stress generation and relaxation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 225: Symposium G – Materials Reliability Issues in Microelectronics , 1991 , 35
Copyright
Copyright © Materials Research Society 1991

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References

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