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Growth of TiO2 thin films on Si(001) and SiO2 by reactive high power impulse magnetron sputtering

Published online by Cambridge University Press:  01 July 2011

F. Magnus ,
B. Agnarsson ,
A. S. Ingason ,
K. Leosson ,
S. Olafsson  and
J. T. Gudmundsson
F. Magnus
Affiliation:
Science Institute, University of Iceland, Dunhaga 3, IS-107, Reykjavik, Iceland
B. Agnarsson
Affiliation:
Science Institute, University of Iceland, Dunhaga 3, IS-107, Reykjavik, Iceland
A. S. Ingason
Affiliation:
Science Institute, University of Iceland, Dunhaga 3, IS-107, Reykjavik, Iceland Thin Film Physics, Department of Physics (IFM), Linköping University, Linköping SE-581 83, Sweden
K. Leosson
Affiliation:
Science Institute, University of Iceland, Dunhaga 3, IS-107, Reykjavik, Iceland
S. Olafsson
Affiliation:
Science Institute, University of Iceland, Dunhaga 3, IS-107, Reykjavik, Iceland
J. T. Gudmundsson
Affiliation:
Science Institute, University of Iceland, Dunhaga 3, IS-107, Reykjavik, Iceland UM-SJTU Joint Institute, Shanghai Jiao Tong University, 800 Dong Chuan Road, Shanghai, 200240, China
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Abstract

Thin TiO2 films were grown on Si(001) and SiO2 substrates by reactive dc magnetron sputtering (dcMS) and high power impulse magnetron sputtering (HiPIMS) at temperatures ranging from 300 to 700 °C. Both dcMS and HiPIMS produce polycrystalline rutile TiO2 grains, embedded in an amorphous matrix, despite no postannealing taking place. HiPIMS results in significantly larger grains, approaching 50% of the film thickness at 700 °C. In addition, the surface roughness of HiPIMS-grown films is below 1 nm rms in the temperature range 300–500 °C which is an order of magnitude lower than that of dcMS-grown films. The results show that smooth, rutile TiO2 films can be obtained by HiPIMS at relatively low growth temperatures, without postannealing.

Keywords

thin filmsputteringoxide
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1352: Symposium GG – Titanium Dioxide Nanomaterials , 2011 , mrss11-1352-gg10-26
Copyright
Copyright © Materials Research Society 2011

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