Hostname: page-component-8448b6f56d-t5pn6 Total loading time: 0 Render date: 2024-04-24T01:58:30.613Z Has data issue: false hasContentIssue false
  • English
  • Français

Innovation Providing New Multiple Functions in Phase-Change Materials To Achieve Cognitive Computing

Published online by Cambridge University Press:  01 February 2011

Stanford R. Ovshinsky  and
Boil Pashmakov
Stanford R. Ovshinsky
Affiliation:
Energy Conversion Devices, 2956 Waterview Drive, Rochester Hills, MI48309
Boil Pashmakov
Affiliation:
Energy Conversion Devices, 2956 Waterview Drive, Rochester Hills, MI48309
Get access

Abstract

This paper describes a basic new scientific and technological approach for information and computing use. It is based on Ovonic cognitive devices that utilize an atomically engineered Ovonic chalcogenide material as the active medium. We demonstrate how such a device possesses many unique functions including an intrinsic neurosynaptic functionality that permits the processing of information in a manner analogous to that of biological neurons and synapses. Our Ovonic cognitive devices can not only accomplish conventional binary computing, but are capable of non-binary generation of information, storage, encryption, higher mathematics, modular arithmetic and factoring. Uniquely, almost all of these functions can be accomplished in a single nanosized device. These devices and systems are robust at room temperature (and above). They are non-volatile and also can include other volatile devices such as the Ovonic Threshold Switch and Ovonic multi-terminal threshold and memory devices that can replace transistors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 803: Symposia GG/HH – Advanced Characterization Techniques for Data Storage Materials – Phase Change and Nonmagnetic Materials for Data Storage , 2003 , HH1.1
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Shor, P.W., Proceedings of the 35th Annual Symposium on the Foundations of Computer Science (IEEE Computer Society Press, Los Alamitos, CA, 1994), p. 124.Google Scholar
2. Grover, L.K. ; Phys. Rev. Lett. 79, 325 (1997).Google Scholar
3. Nielsen, M.A. and Chang, I.L.; Quantum Computation and Quantum Information; Cambridge University Press, Cambridge, 2000.Google Scholar
4. Nieder, A., Freedman, D.J., Miller, E.K. Science 297, 1708 (2002).Google Scholar
5. Dehaene, S.; Science 297, 1652 (2002).Google Scholar
6. Ovshinsky, S.R., Pashmakov, B., Mytilineou, E.; to be published.Google Scholar
7. A new volume updating our work since 1991 is in preparation.Google Scholar
8. Ovshinsky, S.R.; Phys. Rev. Lett. 21, 1450 (1968).Google Scholar
9. Disordered Materials: Science and Technology, Selected Papers by Ovshinsky, Stanford R.; Adler, D., Schwartz, B.B., Silver, M., eds.; Plenum Press, New York, 1991.Google Scholar
10. Disordered Materials: Science and Technology: Selected Papers by Ovshinsky, S.R. Adler, D., ed.; Amorphous Institute Press, Bloomfield Hills, Michigan, 1982.Google Scholar
11. Ovshinsky, S.R.; MRS Symp. Proc. 554, 399 (1999).Google Scholar
12. Ovshinsky, S.R.; Revue Roumaine de Physique, 26, 893 (1981).Google Scholar
13. Ovshinsky, S.R.; “The Quantum Nature of Amorphous Solids”; in Disordered Semiconductors; Kastner, M.A., Thomas, G.A., Ovshinsky, S.R., eds.; Plenum Press, New York (1987); p. 195.Google Scholar
14. Ovshinsky, S.R., Fritzsche, H.; IEEE Trans. Elect. Dev. ED–20, 91 (1973).Google Scholar
15. Ovshinsky, S.R.; Memoires, Optiques et Systemes, No. 127, Sept. 1994, p. 65.Google Scholar
16. Ovonyx is a joint venture between ECD, Tyler Lowrey and Intel Capital, among others.Google Scholar
17. Lowrey, T., Dennison, C., Hudgens, S., Czubatyj, W.; “Characteristics of OUM Phase Change Materials and Devices for High Density Nonvolatile Commodity and Embedded Memory Applications”; 2003 MRS Fall Meeting, Dec. 1–5, 2003, Boston, MA; Symp. HH, paper 2.1.Google Scholar
18. Ovshinsky, S.R.; Proc. of the Intl. Ion Engr. Cong., ISIAT '83 & Ipat '83, Kyoto 12–16 September 1983, p. 817.Google Scholar
19. Adler, D., Ovshinsky, S.R.; Chemtech 15, 538 (1985).Google Scholar
20. For a more recent discussion of our work in phase change optical memory, see: Ovshinsky, S.R., “Optical Cognitive Information Processing – A New Field”; presented at the International Symposium on Optical Memory '03; Nara, Japan; Nov. 3–7, 2003 (to be published in the Japanese Journal of Applied Physics).Google Scholar
21. Morin, F., LaMarche, G., and Ovshinsky, S.R.; Anat. Rec. 127, 436 (1957).Google Scholar
22. Morin, F., LaMarche, G., and Ovshinsky, S.R.; Laval Medical 26, 633 (1958).Google Scholar
23. Ovshinsky, S.R., Ovshinsky, I.M.; Mat. Res. Bull. 5, 681 (1970).Google Scholar