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Monomeric Chelated Amides of Aluminum and Gallium: Volatile, Miscible Liquid Precursors for CVD

Published online by Cambridge University Press:  10 February 2011

Seàn T. Barry ,
Roy G. Gordon  and
Valerie A. Wagner
Seàn T. Barry
Affiliation:
Harvard University Chemical Laboratories Cambridge, MA 02138
Roy G. Gordon
Affiliation:
Harvard University Chemical Laboratories Cambridge, MA 02138
Valerie A. Wagner
Affiliation:
Harvard University Chemical Laboratories Cambridge, MA 02138
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Abstract

New precursors were developed for the chemical vapor deposition (CVD) of aluminum nitride (AIN) and gallium nitride (GaN) at low temperatures. Synthetic methods for the new materials will be reported, along with their analyses and spectral characterization. The precursors are volatile (180 mTorr at 45-55 °C), low-viscosity (10 centipoise) liquids, so they are more convenient as vapor sources than previously available solid sources. They are thermally stable to temperatures well above their vaporization temperatures, so their vaporization is highly reproducible and leaves no residue. Unlike previously available liquid precursors, they are not pyrophoric, so they are safer to handle. AMN films formed by reaction with ammonia at around 200 °C are amorphous, transparent insulators that are good barriers to diffusion of water, oxygen, and other materials.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 606: Symposium NN – Chemical Processing of Dielectrics, Insulators & Electronic Ceramics , 1999 , 83
Copyright
Copyright © Materials Research Society 2000

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References

1 See, for example, Zetterling, C.-M., Ostling, M., Wongchotigul, K., Spencer, M. G., Tang, X., Harris, C. I., Nordell, N. and Wong, S. S., J. Appl. Phys. 82, 2990 (1997).Google Scholar
2 Gordon, R. G., Riaz, U. and Hoffman, D. M., J. Mater. Res. 7, 1679 (1992).Google Scholar
3 Gordon, R. G., Hoffman, D. M. and Riaz, U., (Mat. Res. Soc. Symp. Proc. 204, Pittsburgh, PA, 1991) p. 95.Google Scholar
4 Vaartstra, B. A, US Patent 5,908,947 (1999).Google Scholar
5 Nöth, H.; Konrad, P., Z. Noturforsch., 30b, 681 (1975).Google Scholar
6 Gordon, R. G., Chen, F., DiCeglie, N. J Jr., Kenigsberg, A, Liu, X., Teff, D. J. and J. Thornton, Mat. Re. Soc. Symp. Proc. 495, pp. 63 (1998).Google Scholar
7 McMahon, C. N., Francis, J. A., Bott, S. G., Barron, A. R., J Chem. Soc., Dalton Trans., 67 (1999).Google Scholar
8 for an example, see: Janik, J. F., and Wells, R. L., Chem. Mater., 10, 1613–1622 (1998).Google Scholar