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Thermoelectric Properties and Electronic Structure of BaBiTe3

Published online by Cambridge University Press:  15 February 2011

Duck-Young Chung
Affiliation:
Department of Chemistry and Center for Fundamental Materials Research, Michigan State University, East Lansing, MI 48824.
Stéphane Jobic
Affiliation:
Institut des Matériaux de Nantes, 2 Rue de la Houssinière, 44072 Nantes Cedex 03, France
Tim Hogan
Affiliation:
Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, IL 60208
Carl R. Kannewurf
Affiliation:
Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, IL 60208
Raymond Brec
Affiliation:
Institut des Matériaux de Nantes, 2 Rue de la Houssinière, 44072 Nantes Cedex 03, France
Jean Rouxel
Affiliation:
Institut des Matériaux de Nantes, 2 Rue de la Houssinière, 44072 Nantes Cedex 03, France
Mercouri G. Kanatzidis
Affiliation:
Department of Chemistry and Center for Fundamental Materials Research, Michigan State University, East Lansing, MI 48824. Institut des Matériaux de Nantes, 2 Rue de la Houssinière, 44072 Nantes Cedex 03, France
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Abstract

The compound BaBiTe3 was prepared by the reaction of Ba/Bi/Te at over 700 °C either in K2TE4 or BaTe3 flux and was recrystallized in Ba/Te3 flux. The black rod-shaped polycrystalline material crystallizes in the orthorhombic space group P212121 with a=4.6077(2) A, b=17.0437(8) Å, c=18.2997(8) Å. Its structure is made of interdigitating columnar anionie [Bi4Te10(Te2)] ∞2+ “herring-bone” shaped segments which arrange into layers with Ba ions between them. The electrical conductivity, thermopower, thermal lattice conductivity, infrared absorption properties of this material suggest it is a narrow gap semiconductor.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

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References

1. (a) CRC Handbook of Thermoelectrics, Rowe, D. M., Eds.; CRC press, Inc., 1995 Google Scholar
(b) Kaibe, H.; Tanaka, Y.; Sakata, M.; Nishida, I. J. Phys. Chem. Solids, 1989, 50, 945950 Google Scholar
(c) Jeon, H. -H.; Ha, H. -P.; Hyun, D. -B.; Shim, J. -D. J.Phys. Chem. Solids, 1991, 4, 579585 Google Scholar
2. (a) Kanatzidis, M. G.; McCarthy, T. J.; Tanzer, T. A.; Chen, L. -H.; Iordanidis, L.; Hogan, T.; Kannewurf, C. R.; Uher, C; Chen, .B Chem. Mater., 1996, 8, 14651474.Google Scholar
(b) McCarthy, T. J.; Ngeyi, S. -P; Liao, J. -H.; DeGroot, D. C; Hogan, T.; Kannewurf, C. R.; Kanatzidis, M. G. Chem. Mater., 1993, 5, 331340.Google Scholar
(c) McCarthy, T. J.; Tanzer, T. A.; Kanatzidis, M. G. J.Amer. Chem. Soc, 1995, 117, 12941301.Google Scholar
3. (a) Testardi, L. R.; Bierly, J. N. Jr; Donahoe, F. J. J. Phys. Chem. Solids, 1962, 23, 1209 Google Scholar
(b) Champness, C. H.; Chiang, P. T.; Parekh, P. Can. J.Phys., 1965, 43, 653659 Google Scholar
(c) Yim, W. M.; Fitzke, E. V. J.Electrochem. Soc., 1968, 115, 556560 Google Scholar
4. Chung, D.-Y.; Jobic, S.; Hogan, T.; Kannewurf, C. R.; Bree, R.; Rouxel, J.; Kanatzidis, M. G. submitted.Google Scholar
5. Volk, K.; Cordier, G.; Cook, R.; Schäfer, H. Z. Naturforsch., 1980, 35b, 136140 Google Scholar
6. (a) Cook, R.; Schäfer, H. Studies in Inorganic Chemistry, 1983, 3, 757760.Google Scholar
(b) Cook, R.; Schäfer, H. Rev. Chim. Miner., 1982, 19, 1927 Google Scholar
7. Chung, D.-Y.; Kanatzidis, M. G. to be submitted.Google Scholar
8. (a) Canadell, E.; Jobic, S.; Bree, R.; Rouxel, J.; Whangbo, M. -H. J. Solid State Chem., 1992, 89, 189199 Google Scholar
(b) Jobic, S.; Deniard, P.; Rouxel, J.; Jouanneaux, A.; Fitch, A. N. Z. anorg. allg. Chem., 1991, 598/599, 199215 Google Scholar
9. Buist, R. J. CRC Handbook of Thermoelectrics, Rowe, D. M., Eds.; CRC press, Inc.: 1995, p143. Google Scholar
10. (a) Andersen, O. K.; Jepsen, O. Phys. Rev. Lett., 1984, 53, 25712574 and references therein.Google Scholar
(b) Krier, G.; Jepsen, O.; Burkhardt, A.; Andersen, O. K. The TB-LMTO-ASA program, version 45; Max-Planck-Institut Für Festkörperforschung: Heisenbergstr. 1, D-70569 Stuttgart, Germany Google Scholar
11. Encyclopedia of Materials Science and Engineering, “Thermoelectric Semiconductors”; Cambridge, Mass., MIT Press: Oxford, Pergamon Press: 1986, p4968Google Scholar
12. Kittel, C. Introduction to Solid State Physics, 6th Eds.; John Wiley & Sons, Inc.: 1986, p150 Google Scholar