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Stress and texture in sputter deposited Cr films

Published online by Cambridge University Press:  01 February 2011

S. Yu. Grachev
Affiliation:
Netherlands Institute for Metal Research, Rotterdamseweg 137, 2628 AL Delft, the Netherlands e-mail: s.yu.grachev@tnw.tudelft.nl
J.-D. Kamminga
Affiliation:
Netherlands Institute for Metal Research, Rotterdamseweg 137, 2628 AL Delft, the Netherlands e-mail: s.yu.grachev@tnw.tudelft.nl
G. C. A. M. Janssen
Affiliation:
Department of Materials Science, Delft University of Technology, Rotterdamseweg 137, 2628 AL Delft, the Netherlands
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Abstract

Intrinsic stress in coatings is often responsible for its performance. We studied tensile stress in sputter deposited chromium films as a function of film thickness and Ar pressure during deposition. We correlate the stress evolution to the grain growth in the polycrystalline films. Both grain growth and stress evolution obey the same power law dependence on thickness. We conclude that the tensile stress is generated at the grain boundaries. The power law exponent did not depend on pressure of Ar and remained 0.36. However, texture and microstructure in the layers changed when pressure was increased from 2×10-2 to 6×10-2 mbar. Texture switched from 110 to 111 fiber type. Grooves and sharp star-like grains were observed at higher pressure. We explain changes in terms of suppressed shadowing and less surface diffusion.

Type
Research Article
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

1. D'Heurle, F.M., Metall. Trans. 1, 725 (1970).Google Scholar
2. Doljack, F.A. and Hoffman, R.W., Thin Solid Films, 12 (1), 71 (1972).Google Scholar
3. van der Drift, A., Philips Res. Repts 22, 267 (1967).Google Scholar
4. Karabacack, T., Singh, J.P., Zhao, Y.-P., Wang, G.-C., and Lu, T.-M., Phys. Rev. B 68, 125408 (2003).Google Scholar
5. Janssen, G.C.A.M., Dammers, A.J., Sivel, V.G.M., and Wang, W.R., Appl. Phys. Lett. 83 (16), 3287 (2003).Google Scholar
6. Kaprenko, O.P., Bilello, J.C., and Yalisove, S.M., J. Appl. Phys. 82(3) (1997), 1397.Google Scholar
7. Greene, J.E., Sundgren, J.-E., Hultman, L., Petrov, I., and Bergstrom, D.B., Appl. Phys. Lett. 67 (20) (1995), 2928.Google Scholar