Hostname: page-component-8448b6f56d-tj2md Total loading time: 0 Render date: 2024-04-23T13:26:14.902Z Has data issue: false hasContentIssue false
  • English
  • Français

MOVPE Growth and Characterization of AlInN FET Structures on Si(111)

Published online by Cambridge University Press:  01 February 2011

Christoph Hums ,
Aniko Gadanecz ,
Armin Dadgar ,
Jürgen Bläsing ,
Hartmut Witte ,
Thomas Hempel ,
Annette Dietz ,
Pierre Lorenz ,
Stefan Krischok  and
Jürgen Alois Schaefer
...Show all authors
Christoph Hums
Affiliation:
christoph.hums@physik.uni-magdeburg.de, Otto-von-Guericke-University Magdeburg, Institute of Experimental Physics, Universitätsplatz 2, Magdeburg, 39106, Germany, +493916712471
Aniko Gadanecz
Affiliation:
aniko.gadanecz@student.uni-magdeburg.de, Otto-von-Guericke-University Magdeburg, Institute of Experimental Physics, Universitätsplatz 2, Magdeburg, 39106, Germany
Armin Dadgar
Affiliation:
armin.dadgar@physik.uni-magdeburg.de, Otto-von-Guericke-University Magdeburg, Institute of Experimental Physics, Universitätsplatz 2, Magdeburg, 39106, Germany
Jürgen Bläsing
Affiliation:
juergen.blaesing@uni-magdeburg.de, Otto-von-Guericke-University Magdeburg, Institute of Experimental Physics, Universitätsplatz 2, Magdeburg, 39106, Germany
Hartmut Witte
Affiliation:
hartmut.witte@physik.uni-magdeburg.de, Otto-von-Guericke-University Magdeburg, Institute of Experimental Physics, Universitätsplatz 2, Magdeburg, 39106, Germany
Thomas Hempel
Affiliation:
thomas.hempel@physik.uni-magdeburg.de, Otto-von-Guericke-University Magdeburg, Institute of Experimental Physics, Universitätsplatz 2, Magdeburg, 39106, Germany
Annette Dietz
Affiliation:
annette.dietz@physik.uni-magdeburg.de, Otto-von-Guericke-University Magdeburg, Institute of Experimental Physics, Universitätsplatz 2, Magdeburg, 39106, Germany
Pierre Lorenz
Affiliation:
pierre.lorenz@tu-ilmenau.de, Technical University Ilmenau, Institute of Micro- and Nanotechnologies and Institute of Physics, Weimarerstr. 32, Ilmenau, 98684, Germany
Stefan Krischok
Affiliation:
stefan.krischok@tu-ilmenau.de, Technical University Ilmenau, Institute of Micro- and Nanotechnologies and Institute of Physics, Weimarerstr. 32, Ilmenau, 98684, Germany
Jürgen Alois Schaefer
Affiliation:
juergen.schaefer@ilmenau.de, Technical University Ilmenau, Institute of Micro- and Nanotechnologies and Institute of Physics, Weimarerstr. 32, Ilmenau, 98684, Germany
Jürgen Christen
Affiliation:
juergen.christen@uni-magdeburg.de, Otto-von-Guericke-University Magdeburg, Institute of Experimental Physics, Universitätsplatz 2, Magdeburg, 39106, Germany
Alois Krost
Affiliation:
alois.krost@uni-magdeburg.de, Otto-von-Guericke-University Magdeburg, Institute of Experimental Physics, Universitätsplatz 2, Magdeburg, 39106, Germany
Get access

Abstract

In this work metalorganic chemical vapor phase epitaxy (MOVPE) growth and characterization of AlInN in the whole compositional range and the impact on the development of field effects transistors (FET) structures will be presented. Due to the large difference in the lattice parameters of the binaries AlN and InN the growth of AlInN with high indium concentrations is ambitious, and first the growth conditions for the alloy will be discussed. An experimental phase diagram and corresponding theoretical calculations will be displayed. The critical layer thickness of AlInN on GaN has been experimentally determined. Relaxation of the AlInN-layer has a strong influence on the sample morphology. At indium concentration exceeding 30% an polarization induced hole gas is expected at the AlInN/GaN interface from theoretical calculations, but no p-channel conductivity could be confirmed. The absence of the two dimensional hole gas will be discussed.

Keywords

nitridenanostructurealloy
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1068: Symposium C – Advances in GaN, GaAs, SiC and Related Alloys on Silicon Substrates , 2008 , 1068-C04-03
Copyright
Copyright © Materials Research Society 2008

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Yim, W. M. Stofko, E. J. Zanzucchi, P. J. Pankove, J. I. Ettenberg, M. Gilbert, S. L. J. Appl. Phys. 44, 292 (1973)Google Scholar
2. Intrinsic Properties of Group IV Elements and III-V, II-VI, and I-VII Compounds, edited by Madelung, O. Schulz, M. and Weiss, H. , Landolt-Bornstein, New Series, Group III, Vol. 22a, Springer, Berlin, (1987)Google Scholar
3. Goldhahn, R. Winzer, A. Gobsch, G. Cimalla, V. Ambacher, O. Rakel, M. Cobet, C. Esser, N. Lu, H. Schaff, W. phys. stat. sol. (a) 203, 42 (2006)Google Scholar
4. Butté, R. et al. , J. Phys. D. Appl. Phys. 40, 6328 (2007)Google Scholar
5. Carlin, J.F. Zellweger, C. Dorsaz, J. Nicolay, S. Christmann, G. Feltin, E. Butté, R., Grandjean, N. phys. stat. sol. (b) 242, 2326 (2005)Google Scholar
6. Dadgar, A. Neuburger, M. Schulze, F. Bläsing, J., Krtschil, A. Daumiller, I. Kunze, M. Günther, K.M., Witte, H. Diez, A. Kohn, E. and Krost, A. phys. stat. sol. (a) 202, 832 (2005)Google Scholar
7. Polarization Effects in Semiconductors, edited by Wood, C. and Jena, D. Springer, N.Y. (2008)Google Scholar
8. Krost, A. Dadgar, A. phys. stat. sol. (a), 194, 361 (2002)Google Scholar
9. Neuburger, M. Kunze, M. Daumiller, I. Zimmermann, T. Koley, G. Spencer, M. G. Dadgar, A. Krtschil, A. Krost, A. and Kohn, E. Electronics Letters, 39, 1614 (2003)Google Scholar
10. Edgar, J.H. (Ed.), “Properties of group-III nitrides”, INSPEC (1994)Google Scholar
11. Ambacher, O., Brandt, M. S. Dimitrov, R. Metzger, T. Stutzmann, M. Fischer, R. A. Miehr, A. Bergmaier, A. Dollinger, G. J. Vac. Sci. Technol. B 14, 3532 (1996)Google Scholar
12. Kamp, M. Mayer, M. Pelzmann, A. Ebeling, K.J. Mat. Res. Soc. Symp. Proc. 449, 161 (1997)Google Scholar
13. Deibuk, V.G. , Voznyi, A.V. Semiconductors, 39, 623 (2005)Google Scholar
14. Karpov, S. Y. Podolskaya, N. Zhmakin, I.A. Zhmakin, A.I. Phys. Rev. B 70, 235203 (2004)Google Scholar
15. Ferhat, M. Bechstedt, F. Phys. Rev. B 65, 075213 (2002)Google Scholar
16. Keller, S. DenBaars, S.P. J. Crystal Growth 248, 479 (2002)Google Scholar
17. Zhou, L. Smith, D.J. McCartney, M.R. Katzer, D.S. Storm, D.F. Appl. Phys. Lett. 90, 081917 (2007)Google Scholar
18. People, R. J. Bean., Appl. Phys. Lett. 47, 322 (1985)Google Scholar
19. Waldrop, J.R. Grant, R.W. Appl. Phys. Lett. 68, 2879 (1996)Google Scholar
20. Hums, C. Bastek, B. Bertram, F. Franke, A. Dadgar, A. Bläsing, J., Christen, J. Krost, A. (to be published)Google Scholar