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AFM and HREM Observation of the Pulse Laser Interference Crystallized a--Si:H/a-SiNx:H Multilayers

Published online by Cambridge University Press:  17 March 2011

Li Wang
Affiliation:
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, P. R. China
Xinfan Huang
Affiliation:
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, P. R. China
Jian Li
Affiliation:
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, P. R. China
Jun Xu
Affiliation:
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, P. R. China Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, N.T. Hong Kong
Xiaobo Yin
Affiliation:
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, P. R. China
Qiliang Li
Affiliation:
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, P. R. China
Wei Li
Affiliation:
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, P. R. China
Jianming Zhu
Affiliation:
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, P. R. China
Mu Wang
Affiliation:
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, P. R. China
Zhiguo Liu
Affiliation:
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, P. R. China
Kunji Chen
Affiliation:
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, P. R. China
Y. M. Fung
Affiliation:
Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, N.T. Hong Kong
J. B. Xu
Affiliation:
Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, N.T. Hong Kong
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Abstract

The patterned nc-Si/a-SiNx:H superlattices were fabricated by using laser interference crystallization method and investigated with atomic force microscope (AFM), micro-Raman spectroscope, cross-section transmission electron microscope (TEM) and high resolution electron microscope (HREM). We found that after laser irradiation, self-assembled Si nanocrystallites (nc-Si) are formed within the initial a-Si:H sublayers, moreover, in the plane parallel to the surface of the films, these nc-Si orderly distribute in the certain regions with the same periodicity of 2.0 µm as phase shifting mask grating. Based on the structural analyses, the crystallization mechanism and the origin of the self-assembled phenomena are briefly discussed.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

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References

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