Hostname: page-component-8448b6f56d-qsmjn Total loading time: 0 Render date: 2024-04-24T03:40:51.675Z Has data issue: false hasContentIssue false
  • English
  • Français

A Study of Arsenic Dopant Concentration and Activity as a Function of Growth Conditions in Polycrystalline MOCVD-Grown CdTe

Published online by Cambridge University Press:  01 February 2011

Anne Stafford ,
Stuart J.C. Irvine ,
Ken Durose  and
Guillaume Zoppi
Anne Stafford
Affiliation:
Department of Chemistry, University of Wales, Bangor, Gwynedd, LL57 2AW, U.K.
Stuart J.C. Irvine
Affiliation:
Department of Chemistry, University of Wales, Bangor, Gwynedd, LL57 2AW, U.K.
Ken Durose
Affiliation:
Department of Physics, University of Durham, South Road, Durham, DH1 3LE, U.K.
Guillaume Zoppi
Affiliation:
Department of Physics, University of Durham, South Road, Durham, DH1 3LE, U.K.
Get access

Abstract

P-type CdTe can be produced via acceptor doping with As. However, as with other II/VI materials, the dopant behaviour is not simple, as there is the potential for compensating species to be formed from intrinsic defects and dopant-defect complexes. A further complication is introduced by the presence of grain boundaries in polycrystalline material. This study demonstrates that dopant concentration is a function of VI/II ratio in the growth ambient, and that resistivity is minimised for a dopant concentration of < 2 × 1018 at.cm-3. Grain size is also affected by the VI/II ratio, increasing slightly as the growth ambient becomes more Te-rich.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 763: Symposium B – Compound Semiconductor Photovoltaics , 2003 , B1.5
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Birkmire, R.W., Eser, E.. Annu. Rev. Mater. Sci. 27 (1997) 625–653.Google Scholar
[2] Durose, K., Edwards, P.R., Halliday, D.P.. J. CrystalGrowth 197 (1999) 733–742.Google Scholar
[3] Chu, T.L., Chu, S.S., Ferekides, C., Wu, C.Q., Britt, J., Wang, C.. J. Appl. Phys. 70(12) (1991) 7608–7612.Google Scholar
[4] Turner, A.K., Woodcock, J.M., Ószan, M.E., Cunningham, D.W., Johnson, D.R., Marshall, R.J., Mason, N.B., Oktik, S., Patterson, M.H., Ransome, S.J., Roberts, S., Sadeghi, M., Sherborne, J.M., Surapathasundaram, D., Walls, I.A.. Solar Energy Materials and Solar Cells 35 (1994) 263–270 Google Scholar
[5] Chou, H.C., Rohatgi, A., Jokerst, N.M., Kamra, S., Stock, S.R., Lowrie, S.L., Ahrenkiel, R.K., Levi, D.H.. Materials Chemistry and Physics 43 (1996) 178–182.Google Scholar
[6] Durose, K., Cousins, M.A., Boyle, D.S., Beier, J., Bonnet, D. Thin Solid Films 403-404 (2002) 396–404.Google Scholar
[7] Chu, T.L., Chu, S.S., Ferekides, C., Britt, J., Wu, C.Q.. J. Appl.Phys. 69(11) (1991) 7651–7655 Google Scholar
[8] Desnica, U.V.. Vacuum 50(3-4) (1998) 463–471.Google Scholar
[9] Hartley, A., Irvine, S.J.C., Halliday, D.P., Potter, M.D.G.. Thin Solid Films 387(1-2) (2001) 89–91 Google Scholar
[10] Griffiths, C.L., Stafford, A., Irvine, S.J.C., Maung, N., Jones, A.C., Smith, L.M., Rushworth, S.A.. Appl. Phys. Lett. 68(9) (1996) 1294–1296.Google Scholar
[11] Marfaing, Y.. Thin Solid Films 387 (2001) 123–128.Google Scholar
[12] Korbutyak, D.V., Krylyuk, S.G., Tkachuk, P.M., Tkachuk, V.I., Korbutjak, N.D., Raransky, M.D.. Crystal, J. Growth 197 (1999) 659–662.Google Scholar
[13] Williamson, G.K., Hall, W.H.. Acta Metall. 1 (1953) 22–31.Google Scholar
[14] Astles, M.G., Blackmore, G., Gordon, N., Wight, D.R.. J. Crystal Growth 72 (1985) 61.Google Scholar