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Defect Structures in Epitaxially Grown InAs Films on InP Substrates

Published online by Cambridge University Press:  25 February 2011

A. K. Ballal ,
L. Salamanca-Riba ,
D. L. Partin ,
J. Heremans ,
L. Green  and
B. K. Fuller
A. K. Ballal
Affiliation:
Materials and Nuclear Engineering Department, University of Maryland, College Park, MD 20742–2115.
L. Salamanca-Riba
Affiliation:
Materials and Nuclear Engineering Department, University of Maryland, College Park, MD 20742–2115.
D. L. Partin
Affiliation:
Materials and Nuclear Engineering Department, University of Maryland, College Park, MD 20742–2115.
J. Heremans
Affiliation:
Materials and Nuclear Engineering Department, University of Maryland, College Park, MD 20742–2115.
L. Green
Affiliation:
Materials and Nuclear Engineering Department, University of Maryland, College Park, MD 20742–2115.
B. K. Fuller
Affiliation:
Materials and Nuclear Engineering Department, University of Maryland, College Park, MD 20742–2115.
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Abstract

In this paper we study the lattice-mismatch induced defect structures of InAs films grown on semi-insulating InP substrates using metal organic chemical vapor deposition. The defect structure studies were carried out on films of equal total thicknesses but for different duration for nucleation of a layer of InAs deposited at low temperature on the substrate. Misfit strain is caused by the inherent lattice mismatch of approximately three percent and this is partially relieved by the generation of misfit dislocations at the film/substrate interface. Transmission electron microscopy studies show the presence of an intrinsic strain and the generation of thermal etchpits at the heteroepitaxial interface. Our studies show that there is a direct correlation between the density of dislocations generated at the film/substrate interface and the duration of nucleation of the film on the substrate. Dislocation densities at the surface of the InAs films and at the heteroepitaxial interface differed by almost two orders of magnitude. High resolution electron microscopy reveals abrupt and sharp interfaces in films with thick nucleation layers and also confirms that the lattice mismatch is partially accommodated by the generation of misfit dislocations at the film/substrate interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 238: Symposium Cb – Structure and Properties of Interfaces in Materials , 1991 , 95
Copyright
Copyright © Materials Research Society 1992

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References

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