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Effect of Ion Bombardment on the Structure and Properties of PECVD SiO2

Published online by Cambridge University Press:  15 February 2011

Jung H. Lee ,
Dong S. Kim  and
Young H. Lee
Jung H. Lee
Affiliation:
Department of Chemical Engineering, Drexel University, Philadelphia PA 19104
Dong S. Kim
Affiliation:
Department of Chemical Engineering, Drexel University, Philadelphia PA 19104
Young H. Lee
Affiliation:
Department of Chemical Engineering, Drexel University, Philadelphia PA 19104
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Abstract

SiO2 films were deposited on silicon wafers at 25°C by plasma enhanced decomposition of tetraethoxysilane (TEOS) in a mixture of argon and oxygen. The deposition was performed in a rf-powered (13.56 MIHz) asymmetric plasma reactor. The effect of ion bombardment was evaluated by varying the ion energy flux (IEF) at the substrate surface from 0.93 to 9.94 W/cm2. On-line optical emission spectra (OES) revealed CO, CH, and H peaks whose absorption intensities increased with increasing applied power. On-line mass spectrometer data showed that the peak intensities of OC2H5, SiOH (m/e=45), and HSiOH (m/e=46) fragments decreased with increasing applied power indicating the decomposition of these species. FTIR spectra of the deposited films showed that the concentrations of Si-OH and trapped CO gases in the film decreased with increasing IEF. Also, the FTIR results and the refractive index measurements indicated that the film density increased as a function of IEF. The stoichiometry of the film did not change when IEF was below 2, but for IEF greater than 4.91 W/cm2, the film became Si-rich.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 363 , 1994 , 107
Copyright
Copyright © Materials Research Society 1995

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