Hostname: page-component-8448b6f56d-tj2md Total loading time: 0 Render date: 2024-04-23T17:09:31.415Z Has data issue: false hasContentIssue false
  • English
  • Français

Oxygen Precipitation Nonuniformity for Thermal History Around 723K During Cz Crystal Growth

Published online by Cambridge University Press:  03 September 2012

I. Fusegawa  and
H. Yamagishi
I. Fusegawa
Affiliation:
Isobe R&D Center, Shin-Etsu Handotai Co., Ltd., Isobe 2–13–1 Annaka, Gunma, 379–01, Japan
H. Yamagishi
Affiliation:
Isobe R&D Center, Shin-Etsu Handotai Co., Ltd., Isobe 2–13–1 Annaka, Gunma, 379–01, Japan
Get access

Abstract

We investigated phenomena of oxygen precipitation nonuni-formity along crystal growth axis due to different thermal histories during CZ crystal growth. The oxygen precipitation process employed in this paper was two-step thermal treatments consisting of the first annealing in nitrogen ambient at 1073K for 4 hrs and the second annealing in dry oxygen ambient at 1273K for 16 hrs. The amount of the oxygen precipitation at the shoulder of a silicon single crystal was higher than the one at the tail end. We found this nonuniform distribution profile was due to the thermal history around 723K during crystal growth. Such an nonuniformity could be improved remarkably by adding a preannealing in dry oxygen ambient at 723K for 2 hrs before the two-step thermal treatment.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 63
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Tan, T. Y., Gardner, E. E. and Tice, W. K., Appl. Phys. Lett. 30 175 (1977)Google Scholar
2. Yang, K. H., Kappert, H. F. and Schwuttke, D. G. H., Phys. Status Solid A 50 221 (1978)Google Scholar
3. Shimura, F. and Tsuya, H., J. Electrochem. Soc. 129 1062 (1982)Google Scholar
4. Fraundorf, G., Fraundorf, P., Craven, R. A., Fredrik, R. A., Moody, J. W. and Show, R. W., Electrochem. Soc. 7 1701 (1985)Google Scholar
5. Wagner, P. and Hage, J., Appl. Phys. A 49 123 (1989)Google Scholar
6. Kishino, S., Matushita, Y., Kanamori, M. and Iizuka, T., Jpn J. Appl. Phys. 21 1 (1982)Google Scholar
7. Fuller, C. S. and Logan, R. A., J. Appl. Phys. 28 1427 (1957)Google Scholar
8. Kiser, W., Phys. Rev. 105 4175 (1957)Google Scholar
9. Hrostwski, H. J. and Kiser, H., 9, 214 (1959)Google Scholar
10. Inoue, N., Osaka, J. and Wada, K.. J. Electrochem. Soc. 129 2780 (1982)Google Scholar
11. Shimanuki, Y., Furuya, H., Susuki, I. and Murai, M., Jan. Appl. Phys. 24 1594 (1985)Google Scholar
12. Chio, H. D., Solid State Technology, 77 (1987)Google Scholar
13. Hara, A., Fukuda, T., Hirai, I. and Ohsawa, A., MRS Fall Meeting (1989)Google Scholar