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Current Transport Mechanisms for MSM-Photodetectors on ZnO:N Thin Films

Published online by Cambridge University Press:  31 January 2011

Tingfang Yen ,
Alan Haungs ,
Sung Jin Kim ,
Alexander Cartwright  and
Wayne A. Anderson
Tingfang Yen
Affiliation:
tyen2@buffalo.edu, University at Buffalo, The State University of New York, Electrical Engineering, Buffalo, New York, United States
Alan Haungs
Affiliation:
achaungs@buffalo.edu, University at Buffalo, The State University of New York, Electrical Engineering, Buffalo, New York, United States
Sung Jin Kim
Affiliation:
sk264@buffalo.edu, University at Buffalo, The State University of New York, Electrical Engineering, Buffalo, New York, United States
Alexander Cartwright
Affiliation:
anc@buffalo.edu, University at Buffalo, The State University of New York, Electrical Engineering, Buffalo, New York, United States
Wayne A. Anderson
Affiliation:
waanders@buffalo.edu, University at Buffalo, The State University of New York, Electrical Engineering, Buffalo, New York, United States
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Abstract

Metal-semiconductor-metal photodetectors (MSM-PDs) on ZnO:N thin films deposited by radiofrequency (RF) sputtering and with post N+ ion implantation processing were fabricated using a ZnO/Si structure. A 10 times reduction in dark current was observed compared to the devices on an as-deposited ZnO thin film without ion implantation. These MSM-PDs gave performances of a photo-to-dark current ratio of 2030 and responsivity (R) = 2.7 A/W; the pulse response was a 12.3 ns rise time and 15.1 ns fall time using a femto-second pulse. Temperature-dependent current -voltage (I-V-T) characteristics of the MSM-PDs were observed and the space charge limited current (SCLC) theory was applied to determine the current transport mechanisms. In the SCLC region, J∼Vm gave m to determine the current transport mechanism and the value of m changes with temperatures and applied voltages. Current transport is governed by the ZnO structure rather than the electrodes.

Keywords

oxidethin filmion-implantation
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1201: Symposium H – Zinc Oxide and Related Materials-2009 , 2009 , 1201-H05-41
Copyright
Copyright © Materials Research Society 2010

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References

[1] Basak, D., Amin, G., Mallik, B., Paul, G. K., and Sen, S. K., “Photoconductive UV detectors on sol-gel-synthesized ZnO films,” Journal of Crystal Growth, vol. 256, pp. 73–77, 2003.10.1016/S0022-0248(03)01304-6Google Scholar
[2] Yen, T. F., Strome, D., Kim, S. J., Cartwright, A. N., and Anderson, W. A., “Annealing studies on zinc oxide thin films deposited by magnetron sputtering,” Journal of Electronic Materials, vol. 37, pp. 764–769, May 2008.10.1007/s11664-007-0357-4Google Scholar
[3] Yen, T., DiNezza, M., Haungs, A., Kim, S. J., Anderson, W. A., and Cartwright, A. N., “Effects of nitrogen doping of ZnO during or after deposition,” Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol. 27, pp. 1943–1948, 2009.10.1116/1.3167363Google Scholar
[4] Ng, K. K., Complete Guide To Semiconductor Devices: Wiley Interscience, 2002.Google Scholar
[5] Campbell, A.J., Bradley, D. D. C., and Lidzey, D. G., “Space-charge limited conduction with traps in poly (phenylene vinylene) light emitting diodes,” Journal of Applied Physics, vol. 82, pp. 6326–6342, Dec 1997.10.1063/1.366523Google Scholar
[6] Ilegems, M. and Queisser, H. J., “Current transport in relaxation-case GaAs,” Physical Review B, vol. 12, pp. 1443–1451, 1975.10.1103/PhysRevB.12.1443Google Scholar
[7] Roberts, G. G., “Electron Injection into a p-Type Semiconductor,” Physica Status Solidi (b), vol. 27, pp. 209–218, 1968.10.1002/pssb.19680270122Google Scholar