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Initial Stages of Growth of Epitaxial InAs Films on InP Substrate

Published online by Cambridge University Press:  25 February 2011

K. S. Chandra Sekhar ,
A. K. Ballal ,
L. Salamanca-Riba  and
D. L. Partin
K. S. Chandra Sekhar
Affiliation:
Department of Materials and Nuclear Engineering, University of MarylandCollege Park, MD 20742
A. K. Ballal
Affiliation:
Department of Materials and Nuclear Engineering, University of MarylandCollege Park, MD 20742
L. Salamanca-Riba
Affiliation:
Department of Materials and Nuclear Engineering, University of MarylandCollege Park, MD 20742
D. L. Partin
Affiliation:
General Motors Research Laboratory, Warren, MI 48090-9055
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Abstract

In this work we investigate the initial stages of growth of heteroepitaxial films of InAs on semi-insulating InP substrates using MOCVD. Very thin films grown at different temperatures, Tn, were studied using TEM and SEM. The 3.2% lattice mismatch between InAs and InP causes strains that are partially accomodated by the generation of misfit dislocations at the interface. Our studies indicate that the deposited InAs nucleates in the form of islands which then grow and coalesce to form the film. Elemental mapping studies indicate that the area of substrate covered by the film is a function of the growth temperature. The thickness of the film and the electron mobilities also vary with T°. The films with best mobilities were obtained for Tn = 480°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 263: Symposium F – Mechanisms of Heteroepitaxial Growth , 1992 , 79
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

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