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Study of Structural Defects in CdZnTe Crystals by High Resolution Electron Microscopy

Published online by Cambridge University Press:  29 July 2011

A. Hossain ,
A. E. Bolotnikov ,
G. S. Camarda ,
Y. Cui ,
R. Gul ,
K-H. Kim ,
K. Kisslinger ,
D. Su ,
G. Yang  and
L. H. Zhang
...Show all authors
A. Hossain
Affiliation:
Brookhaven National Laboratory, Upton, NY 11973, USA
A. E. Bolotnikov
Affiliation:
Brookhaven National Laboratory, Upton, NY 11973, USA
G. S. Camarda
Affiliation:
Brookhaven National Laboratory, Upton, NY 11973, USA
Y. Cui
Affiliation:
Brookhaven National Laboratory, Upton, NY 11973, USA
R. Gul
Affiliation:
Brookhaven National Laboratory, Upton, NY 11973, USA
K-H. Kim
Affiliation:
Brookhaven National Laboratory, Upton, NY 11973, USA
K. Kisslinger
Affiliation:
Brookhaven National Laboratory, Upton, NY 11973, USA
D. Su
Affiliation:
Brookhaven National Laboratory, Upton, NY 11973, USA
G. Yang
Affiliation:
Brookhaven National Laboratory, Upton, NY 11973, USA
L. H. Zhang
Affiliation:
Brookhaven National Laboratory, Upton, NY 11973, USA
R. B. James
Affiliation:
Brookhaven National Laboratory, Upton, NY 11973, USA
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Abstract

We investigated defects in CdZnTe crystals produced from various conditions and their impact on fabricated devices. In this study, we employed transmission and scanning transmission electron microscope (TEM and STEM), because defects at the nano-scale are not observed readily under an optical or infrared microscope, or by most other techniques. Our approach revealed several types of defects in the crystals, such as low-angle boundaries, dislocations and precipitates, which likely are major causes in degrading the electrical properties of CdZnTe devices, and eventually limiting their performance.

Keywords

II-VIdefectstransmission electron microscopy (TEM)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1341: Symposium U – Nuclear Radiation Detection Materials , 2011 , mrss11-1341-u05-04
Copyright
Copyright © Materials Research Society 2011

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References

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