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Size-dependent Temperature Instability in NiO–based Resistive Switching Memory

Published online by Cambridge University Press:  01 February 2011

Daniele Ielmini ,
Federico Nardi ,
Carlo Cagli  and
Andrea L. Lacaita
Daniele Ielmini
Affiliation:
ielmini@elet.polimi.it, Politecnico di Milano, Dipartimento di Elettronica e Informazione, Milano, Italy
Federico Nardi
Affiliation:
nardi@elet.polimi.it, Politecnico di Milano, Milano, MI, Italy
Carlo Cagli
Affiliation:
cagli@elet.polimi.it, Politecnico di Milano, Milano, MI, Italy
Andrea L. Lacaita
Affiliation:
lacaita@elet.polimi.it, Politecnico di Milano, Milano, MI, Italy
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Abstract

Resistive switching memory (RRAM) is attracting a strong interest as novel nonvolatile memories for high-density storage. Anyway this technology has to overcome two main issues before its use in real applications which are the high current needed for program operations and data retention stability. These two problems are here investigated from experimental and theoretical points of view to clarify the possibilities of NiO RRAMs to become a real competitive alternative to mainstream Flash technology.

Keywords

metal-insulator transitionoxideelectrical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1250: Symposium G – Materials and Physics for Nonvolatile Memories II , 2010 , 1250-G05-03
Copyright
Copyright © Materials Research Society 2010

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References

1 Baek, I. G., Lee, M. S., Seo, S., Lee, M. J., Seo, D. H., Suh, D.-S., Park, J. C., Park, S. O., Kim, H. S., Yoo, I. K., Chung, U.-In and Moon, J. T., IEDM Tech. Dig. 587–590 (2004).Google Scholar
2 Strukov, D., Snider, G. S., Stewart, D. R. and Williams, R. S., Nature 453, 80–83 (2008).10.1038/nature06932Google Scholar
3 Chen, A., Haddad, S., Wu, Y.-C., Fang, T.-N., Zhida, L., Avanzino, S., Pangrle, S., Buynoski, M., Rathor, M., Cai, W., Tripsas, N., Bill, C., VanBuskirk, M., Taguchi, M., IEDM Tech. Dig. 746–749 (2005).Google Scholar
4 Goux, L., Lisoni, J. G., Courtade, L., Muller, C., Jurczak, M. and Wouters, D. J., IEEE Proceedings of International Memory Workshop, 13 (2009).Google Scholar
5 Russo, U., Ielmini, D., Cagli, C. and Lacaita, A. L., IEEE Trans. Electron Devices 56, 186–192 (2009).10.1109/TED.2008.2010583Google Scholar
6 Cagli, C., Nardi, F. and Ielmini, D., IEEE Trans. Electron Devices 56, 1712–1720 (2009).10.1109/TED.2009.2024046Google Scholar
7 Ielmini, D., Phys. Rev. B 78, 035308 (2008)Google Scholar
8 Ielmini, D., Cagli, C. and Nardi, F., Appl. Phys. Lett. 94, 063511 (2009)Google Scholar
9 Kim, C. H., Moon, H. B., Min, S. S., Jang, Y. H. and Cho, J. H., Solid-State Comm. 149, 1611–1615 (2009).10.1016/j.ssc.2009.06.033Google Scholar
10 Russo, U., Ielmini, D., Cagli, C. and Lacaita, A. L., IEEE Trans. Electron Devices 56, 193–200 (2009).10.1109/TED.2008.2010584Google Scholar
11 Kinoshita, K., Tsunoda, K., Sato, Y., Noshiro, H., Yagaki, S., Aoki, M. and Sugiyama, Y., Appl. Phys. Lett. 93, 033506 (2008).10.1063/1.2959065Google Scholar
12 Spiga, S., Lamperti, A., Wiemer, C., Perego, M., Cianci, E., Tallarida, G., Lu, H. L., Alia, M., Volpe, F. G., Fanciulli, M., Microelectronic Engineering 85, 2414–2419 (2008).10.1016/j.mee.2008.09.018Google Scholar
13 Ielmini, D., Nardi, F., Vigani, A., Cianci, E. and Spiga, S., IEEE Semiconductor Interface Specialist Conference (SISC), Arlington, VA, Dec. 3–5, 2009.Google Scholar
14 Crandall, R. S., Phys. Rev. B 43, 4057 (1991).10.1103/PhysRevB.43.4057Google Scholar
15 Ohgai, T., Gravier, L., Hoffer, X., Lindeberg, M., Hjort, K., Spohr, R. and Ansermet, J.-Ph., J. Phys. D: Appl. Phys. 36 3109–3114 (2003).10.1088/0022-3727/36/24/003Google Scholar
16 Davydov, N. D., Haruyama, J., Routkevitch, D., Statt, B. W., Ellis, D., Moskovits, M. and Xu, J. M., Phys. Rev. B 57, 13550–13553 (1998).10.1103/PhysRevB.57.13550Google Scholar
17 Ielmini, D., Nardi, F., Cagli, C. and Lacaita, A. L., IEEE Electron Device Lett., in pressGoogle Scholar
18 Fang, T.-N., Kaza, S., Haddad, S., Chen, A., Wu, Y.-C., Lan, Z., Avanzino, S., Liao, D., Gopalan, C., Choi, S., Mahdavi, S., Buynoski, M., Lin, Y., Marrian, C., Bill, C., VanBuskirk, M., and Taguchi, M., in IEDM Tech. Dig., 2006, pp. 789–792.Google Scholar
19 Park, J., Yoon, J., Jo, M., Seong, D.-J., Lee, J., Lee, W., Shin, J., Bourin, E.-M., and Hwang, H., in as discussed at 2009 IEEE SISC, Arlington, VA, 2009 Google Scholar
20 Ielmini, D., Spinelli, A. S., Lacaita, A. L. and Modelli, A., IEEE Electron Device Lett. 23, 40–42 (2002).10.1109/55.974806Google Scholar
21 Makhlouf, S. A., Thin Solid Films 516, 3112 (2008).10.1016/j.tsf.2007.07.213Google Scholar
22 Ielmini, D. and Boniardi, M., Appl. Phys. Lett. 94, 091906 (2009).Google Scholar