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Dislocation Reduction on Simox Substrates by Using Multiple Implants

Published online by Cambridge University Press:  28 February 2011

Tom F. Cheek Jr.  and
Daniel Chen
Tom F. Cheek Jr.
Affiliation:
Texas Instruments Incorporated, 13500 N. Central Expressway Dallas, Texas 75265
Daniel Chen
Affiliation:
Texas Instruments Incorporated, 13500 N. Central Expressway Dallas, Texas 75265
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Abstract

A technique for dislocation density reduction in SIMOX (Separation by IMplantation of OXygen) substrates by using multiple implant and anneal cycles is described. This scheme produces SIMOX material with dislocation defect densities less than 1 x 105/cm2. This dislocation density value is three to four orders of magnitude lower than that of comparable single implant slices having the same total dose and anneal conditions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 107: Symposium H – Silicon-on-Insulator and Buried Metals in Semiconductors , 1987 , 53
Copyright
Copyright © Materials Research Society 1988

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References

1 Lam, H. w., “SIMOX SOI for Integrated Circuit Fabrication,” IEEE Circuits and Devices Magazine 3, 4, 6 (1987).Google Scholar
2 Jager, H. U., et al. , “A Model for the Oxidation of Silicon by High Dose Oxygen Implantation,” Thin Film Solids 123, 159 (1985).Google Scholar
3 Homma, Y., et al. , “An Investigation of the Properties of an Epitaxial Si Layer on a Substrate with a Buried SiOo Layer Formed by Oxygen Ion Implantation,” Japan. J. Appl. Phys. 21, 6, 890 (1982).CrossRefGoogle Scholar
4 Hill, D., Fraundorf, P., and Fraundorf, G., IEEE SOS/SOI Workshop, Durango, CO, September 1987. To be published in J. Appl. Phys., 1988.Google Scholar