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Preparation of Boron-Rich Refractory Semiconductors

Published online by Cambridge University Press:  25 February 2011

T. L. Aselage
T. L. Aselage*
Affiliation:
Electronic Ceramics Division 1842, Sandia National Laboratories, Albuquerque, NM 87185
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Abstract

Boron-rich refractory solids based on the rhombohedral structure of α-B exhibit electrical properties that range from a hopping-type semiconductor (boron carbide) to wide bandgap room temperature insulators (the boron pnictides B6P and B6As). As such, they are of interest for a variety of high temperature semiconductor applications. Preparation techniques for these unusual materials are reviewed, and new results on the crystal growth of boron carbides and B6As and on thin film deposition of B6P are presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 97: Symposium I – Novel Refractory Semiconductors , 1987 , 101
Copyright
Copyright © Materials Research Society 1987

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