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Emission Wavelength Control of Si-rich SiOx MOSLED by Detuning Vapor Fluence and Plasma Power During PECVD Growth

Published online by Cambridge University Press:  01 February 2011

Bo-Han Lai ,
Yi-Hao Pai ,
Chi-Wee Liu  and
Gong-Ru Lin
Bo-Han Lai
Affiliation:
grlin@ntu.edu.tw, National Taiwan University, Graduate Institute of Photonics and Optoelectronics and Department of Electrical Engineering, No. 1, Roosevelt Rd. Sec. 4, Taipei, 10617, Taiwan
Yi-Hao Pai
Affiliation:
paiyihao930@ntu.edu.tw, National Taiwan University, Graduate Institute of Photonics and Optoelectronics and Department of Electrical Engineering, No. 1, Roosevelt Rd. Sec. 4,, Taipei, 10617, Taiwan
Chi-Wee Liu
Affiliation:
grlin@ntu.edu.tw, National Taiwan University, Graduate Institute of Electronics Engineering, No. 1, Roosevelt Rd. Sec. 4, Taipei, 10617, Taiwan
Gong-Ru Lin
Affiliation:
grlin@ntu.edu.tw, National Taiwan University, Graduate Institute of Photonics and Optoelectronics and Department of Electrical Engineering, No. 1, Roosevelt Rd. Sec. 4, Taipei, 10617, Taiwan
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Abstract

Photoluminescence (PL) intensity and wavelength control of Si-rich SiOx film and Si-rich SiOx based MOSLED achieved by detuning plasma power (RF power) during plasma-enhanced chemical vapor deposition (PECVD) growth is investigated. The peak of PL spectrum blue-shifts from 780 to 400 nm by modifying the RF power form 20 to 70 W during PECVD growth. The average sizes of Si nanocluster under RF power of 60 and 70W are 2.61 and 1.83 nm, respectively. The EL color of Si nanocrystal (nc-Si) based MOSLEDs can be tunable among orange-red, green and blue colors by growing the SiOx films with PECVD under different RF power. Under RF power from 50 to 70W, the turn-on voltage of nc-Si based MOSLEDs increases from 26 to 60 V, the optical power also increases from 1.6 W/cm2 to 9.7 W/cm2 and the power-current slope are 0.51, 3.24 and 62.92 mW/A, respectively.

Keywords

Siplasma-enhanced CVD (PECVD) (deposition)film
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1074: Symposium I – Synthesis and Metrology of Nanoscale Oxides and Thin Films , 2008 , 1074-I10-20
Copyright
Copyright © Materials Research Society 2008

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References

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