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Studies of an InAs/GaAs Heterojunction by Total-Electron-Yield

Published online by Cambridge University Press:  21 February 2011

A. Krol ,
C. J. Sher ,
D. R. Storch ,
S. C. Woronick ,
L. Krebs ,
Y. H. Kao  and
L. L. Chang
A. Krol
Affiliation:
Department of Physics, State University of New York at Stony Brook, Stony Brook, NY 11794
C. J. Sher
Affiliation:
Department of Physics, State University of New York at Stony Brook, Stony Brook, NY 11794
D. R. Storch
Affiliation:
Department of Physics, State University of New York at Stony Brook, Stony Brook, NY 11794
S. C. Woronick
Affiliation:
Department of Physics, State University of New York at Stony Brook, Stony Brook, NY 11794
L. Krebs
Affiliation:
Department of Physics, State University of New York at Stony Brook, Stony Brook, NY 11794
Y. H. Kao
Affiliation:
Department of Physics, State University of New York at Stony Brook, Stony Brook, NY 11794
L. L. Chang
Affiliation:
IBM Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598
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Abstract

Total electron yield (TEY) of an InAs/GaAs heterojunction due to soft x-ray excitation has been studied. This heterojunction was prepared by an overgrowth of a 600 Å InAs layer on a GaAs substrate using molecular beam epitaxy. Experimental data are compared with theoretical analysis based on a modified Fresnel formulation to calculate the wave field distribution in stratified media with interfacial roughness. The TEY angular profiles obtained at a given x-ray energy reveal information on the interfacial roughness, secondary electron escape length, attenuation length of elastically scattered photo-electrons, and optical constants of the epilayer in the xray regime.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 143: Symposium V – Synchrotron Radiation in Materials Research , 1988 , 25
Copyright
Copyright © Materials Research Society 1989

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References

1. Bambynek, W., Crasemann, B., Fink, R.W., Freund, H.U., Mark, H., Swift, C.D., Price, R.E., and Rao, P.Venugopala, Rev. Mod. Phys. 44, 716 (1972).Google Scholar
2. Stohr, J., Noguera, C., and Kendelewicz, T., Phys. Rev. B 30, 5571 (1984).Google Scholar
3. Erbil, A., Cargill, G.S., III Frahm, R., and Boehme, R.F., Phys. Rev. B 37, 2450 (1988).Google Scholar
4. Krol, A., Sher, C.J., and Kao, Y.H., Phys. Rev. B 38, 8579 (1988).Google Scholar
5. Seah, M.P. and Dench, W.A., Surface and Interface Analysis 1, 2 (1979).Google Scholar