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Anti-Parallel Circuit of Resistive Cu/TaOx/Pt Switches

Published online by Cambridge University Press:  22 May 2012

Tong Liu ,
Yuhong Kang ,
Mohini Verma  and
Marius Orlowski
Tong Liu
Affiliation:
Bradley Department of Electrical and Computer Engineering, Virginia Polytechnic Institute and State University, Blacksburg, VA 24061, U.S.A.
Yuhong Kang
Affiliation:
Bradley Department of Electrical and Computer Engineering, Virginia Polytechnic Institute and State University, Blacksburg, VA 24061, U.S.A.
Mohini Verma
Affiliation:
Bradley Department of Electrical and Computer Engineering, Virginia Polytechnic Institute and State University, Blacksburg, VA 24061, U.S.A.
Marius Orlowski
Affiliation:
Bradley Department of Electrical and Computer Engineering, Virginia Polytechnic Institute and State University, Blacksburg, VA 24061, U.S.A.
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Abstract

Resistive switches are being explored as a candidate for ultra-dense memory as well as logic circuits. The advantages of the resistive switches include high switching speed and excellent scaling potential. Here, we report for the first time the switching behavior of anti-parallel connected resistive switches (APS), which is a composite device exhibiting bi-directional switching properties. Under the opposite voltage biases, the two anti-parallel cells are alternatively set and reset, rendering the APS switched in both directions. For appropriate ON resistance values and set and reset voltages the two anti-parallel switches can be both set in conductive states. An APS device can be realized in a single switch by two coexisting Cu and oxygen vacancy nanofilaments which are formed and ruptured under opposite voltage polarities. The described APS behavior is of interest to logic applications and in neural networks.

Keywords

memoryoxidedevices
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1430: Symposium E – Materials and Physics of Emerging Nonvolatile Memories , 2012 , mrss12-1430-e06-01
Copyright
Copyright © Materials Research Society 2012

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References

REFERENCES

1. Lu, W., Jeong, D. S., Kozicki, M., and Waser, R., MRS Bulletin 37, 124 (2012).Google Scholar
2. Borghetti, J., Snider, G. S., Kuekes, P. J., Yang, J. J., Stewart, D. R., and Williams, R. S., Nature 464, 873 (2010).Google Scholar
3. Strukov, D. B., Snider, G. S., Stewart, D. R., and Williams, R. S., Nature 453, 80 (2008).Google Scholar
4. Hasegawa, T., Ohno, T., Terabe, K., Tsuruoka, T., Nakayama, T., Gimzewski, J. K., and Aono, M., Adv. Mater. 22, 1831 (2010).Google Scholar
5. Linn, E., Rosezin, R., Kugeler, C., and Waser, R., Nat. Mater. 9, 403 (2010).Google Scholar
6. Kang, Y., Liu, T., and Orlowski, M., IEEE Trans. Electron Devices, submitted for publication.Google Scholar
7. Kang, Y., Verma, M., Liu, T., Orlowski, M., “Firing of a Pulse and its Control Using a Novel Floating Electrode Bi-Resistive Device”, to be presented at the 2012 MRS Spring Meeting, San Francisco, CA, 2012.Google Scholar
8. Corinto, F., Ascoli, A., and Gilli, M., in Proc. 20th European Conf. on Circuit Theory and Design (ECCTD), 2011, pp. 632–635.Google Scholar
9. Sakamoto, T., Banno, N., Iguchi, N., Kawaura, H., Sunamura, H., Fujieda, S., Terabe, K., Hasegawa, T., and Aono, M., in VLSI Symp. Tech. Dig., 2007, pp. 38–39.Google Scholar
10. Waser, R. (Ed.), Nanoelectronics and Information Technology, 3rd ed. (Wiley-VCH, Berlin, 2012).Google Scholar
11. Chae, S. C., Lee, J. S., Kim, S., Lee, S. B., Chang, S. H., Liu, C., Kahng, B., Shin, H., Kim, D.-W., Jung, C. U., Seo, S., Lee, M.-J., and Noh, T. W., Adv. Mater. 20, 1154 (2008).Google Scholar
12. Yu, S., Chen, Y. Y., Guan, X., Wong, H.-S. P., and Kittl, J. A., Appl. Phys. Lett. 100, 043507 (2012).Google Scholar