Hostname: page-component-8448b6f56d-m8qmq Total loading time: 0 Render date: 2024-04-24T22:39:29.467Z Has data issue: false hasContentIssue false

High Performance Polysilicon Thin Film Transistor Circuits On Flexible Stainless Steel Foils

Published online by Cambridge University Press:  15 February 2011

Themis Afentakis
Affiliation:
Display Research Laboratory, Department of Electrical & Computer Engineering, Lehigh University, Bethlehem, PA
Miltiadis K. Hatalis
Affiliation:
Display Research Laboratory, Department of Electrical & Computer Engineering, Lehigh University, Bethlehem, PA
Apostolos T. Voutsas
Affiliation:
Sharp Labs of America, Camas, WA
John W. Hartzell
Affiliation:
Sharp Labs of America, Camas, WA
Get access

Abstract

In recent years, there has been an increased interest in the use of flexible substrates in microelectronic fabrication. Flexible substrates, such as polymers and metals have the potential to be utilized in roll-to-roll processing, resulting in low cost, rugged systems. Thin flexible stainless steel foils offer a number of advantages over polymers for device and circuit fabrication, most significantly in the increased thermal budget tolerance that they provide. This enables the utilization of high temperature processes in the fabrication and the production of high performance devices and circuits.

Thin film transistors have been fabricated on thin stainless steel foils using a variety of crystallization and gate dielectric approaches. N-channel devices with average effective mobility values of 250cm2/Vs and p-channel devices with effective mobility values in the region of 90cm2/Vs were successfully fabricated. Both digital and analog circuits, such as operational amplifiers, ring oscillators and a variety of shift register designs were also fabricated, and their basic performance characteristics will be presented in this paper. The characteristics of ring oscillators having 19 inverter stages operating with speeds of 15MHz or higher, along with the characteristics of various shift register architectures with maximum operating frequencies above 1MHz, will be reported. The impact of process and design parameters on their operation was evaluated and will be addressed in this paper.

The results that are presented in this paper constitute the first successful implementation of high performance circuitry having a high degree of scalability and complexity on thin metal foils, thus making the fabrication of efficient, inexpensive and versatile systems on flexible foils for a large variety of applications a realistic prospect.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Theiss, S.D., Wagner, S., IEEE Elec. Dev. Lett., Vol. 17, p. 578, (1996)Google Scholar
2. Carey, P., Smith, P., Thompson, M., Sigmon, T., 1997 55th Ann. Dev. Res. Conf. Dig., p. 58, (1997)Google Scholar
3. Theiss, S., Wu, C., Lu, M., Sturm, J., Wagner, S., MRS 1997 Spring Meeting Proc., 471, p.21, (1997)Google Scholar
4. King, Tsu Jae, Inf. Disp., Vol. 17, p. 27, (2001)Google Scholar
5. Matsukawa, F., Arai, H., Hayashi, S., SAE Spec. Publ., p. 1, (1985)Google Scholar
6. Ikeda, M., Mizutani, Y., Ashida, S., Yamada, K., IEICE Trans. On Elec., Vol. E-83C, No. 10, p. 1584, (2000)Google Scholar
7. Kato, K. et. al., IEICE Transactions on Electronics, Vol. E80-C, No. 2, pp320326, (1997)Google Scholar
8. Afentakis, T., Stewart, M., Howell, R., Hatalis, M., SID Digest, Vol. 33, pp. 538541, (2000)Google Scholar
9. Afentakis, T., Hatalis, M., SPIE Proceedings, Vol. 4295, pp. 95101, (2001)Google Scholar