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Modeling the Dependence of the Gate Current on Ge Content in Ultrathin Gate Dielectric Pmos Devices with Poly-Si1−Gex Gate Material

Published online by Cambridge University Press:  10 February 2011

A. Shanware ,
H. Z. Massoud ,
A. Acker ,
V. Z. Q. Li ,
M. R. Mirabedini ,
K. Henson ,
J. R. Hauser  and
J. J. Wortman
A. Shanware
Affiliation:
Department of Electrical and Computer Engineering, Duke University, Durham, NC, 27708-0291
H. Z. Massoud
Affiliation:
Department of Electrical and Computer Engineering, Duke University, Durham, NC, 27708-0291
A. Acker
Affiliation:
Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC, 27695
V. Z. Q. Li
Affiliation:
Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC, 27695
M. R. Mirabedini
Affiliation:
Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC, 27695
K. Henson
Affiliation:
Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC, 27695
J. R. Hauser
Affiliation:
Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC, 27695
J. J. Wortman
Affiliation:
Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC, 27695
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Abstract

The performance of CMOS devices improves due to the addition of Ge in their poly-Si gate material. The presence of Ge in the gate increases the current drive due to the reduction of the flatband voltage. The change in the flatband voltage is due to a shift in the valence-band energy level in the gate. This shift results in a change in the barrier height for electrons tunneling from the gate. Thus, the presence of Ge in the gate increases the tunneling current in the gate. This increase may result in a limitation in the use of SiGe gates in future generations of MOSFETs with ultrathin gate dielectrics. The purpose of this work is to investigate the effect of Ge content on the tunneling current in CMOS devices with ultrathin gate dielectrics.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 567: Symposium R – Ultrathin SiO2 and Higg-K Materials for ULSI Gate Dielectrics , 1999 , 127
Copyright
Copyright © Materials Research Society 1999

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References

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