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InGaN Growth with Indium Content Controlled by GaN Growth Plane

Published online by Cambridge University Press:  01 February 2011

Hisashi Kanie  and
Kenichi Akashi
Hisashi Kanie
Affiliation:
kanie@te.noda.tus.ac.jp, Tokyo University of Science, Applied Electronics, Yamazaki 2641, Noda, N/A, Japan, 81-4-7122-9643, 81-4-7122-9195
Kenichi Akashi
Affiliation:
j8107601@ed.noda.tus.ac.jp, Graduate School of Tokyo University of Science, Applied Electronics, Yamazaki 2641, Noda, N/A, Japan
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Abstract

Highly spatially resolved cathodoluminescence (HRCL) imaging and electron backscattering pattern (EBSP) study of InGaN microcrystals were achieved. InGaN grown by the nitridation of a mixture of GaN microcrystals and indium sulfide powders with ammonia at 1000°C had crystal habit with twelve prismatic planes. The prismatic planes were grouped into two groups: the first group is pentagonal shaped planes yielding blue CL (420nm) and rectangular planes without luminescence. EBSP showed that the pentagonal shaped planes are indexed to the {11-20} a-plane and the rectangular plane to the {1-100} m-plane. HRCL imaging showed InGaN accumulated at the V pits on the basal plane. The obevation indicated that the crystal qualty of InGaN and the indium contents incorpated were controlled by the indices of GaN growth planes on which InGaN grew.

Keywords

nitrideluminescencecrystal
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1068: Symposium C – Advances in GaN, GaAs, SiC and Related Alloys on Silicon Substrates , 2008 , 1068-C08-08
Copyright
Copyright © Materials Research Society 2008

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References

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