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Aluminum Oxide Passivation Layer for Crystalline Silicon Solar Cells Deposited by Mist CVD in Open-Air Atmosphere

Published online by Cambridge University Press:  01 April 2014

Toshiyuki Kawaharamura
Affiliation:
Institute for Nanotechnology, Kochi University of Technology, Kami 782-8502, Japan
Takayuki Uchida
Affiliation:
Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
Kenji Shibayama
Affiliation:
Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
Shizuo Fujita
Affiliation:
Photonics and Electronics Science and Engineering Center, Kyoto University, Kyoto 615-8520, Japan
Takahiro Hiramatsu
Affiliation:
Future Technology Center, Toshiba Mitsubishi-Electric Industrial Systems Corporation (TMEIC), Kobe 650-0047, Japan
Hiroyuki Orita
Affiliation:
Future Technology Center, Toshiba Mitsubishi-Electric Industrial Systems Corporation (TMEIC), Kobe 650-0047, Japan
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Abstract

The surface passivation of Si wafer by AlOx thin films grown by mist CVD in an open-air atmosphere was studied with a view to improving the effect of high-performance c-Si solar cells. In AlOx thin film grown at a temperature above 400°C by mist CVD, the OH bonding did not remain in the film and the breakdown field (EBD) was over 6 MV/cm. In Si wafers passivated by AlOx thin films grown by mist CVD at growth temperature above 400°C, the negative fixed charge density (Qf) at the interface was higher than 1012 cm-2 and the surface recombination velocity (Seff) was 44.4 cm/s. These results show that mist CVD, which is fundamentally an environmentally friendly technique, may be suitable for the fabrication of a passivation film on Si surfaces designed to improve the effect of high-performance c-Si solar cells.

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Articles
Copyright
Copyright © Materials Research Society 2014 

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References

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