Hostname: page-component-8448b6f56d-cfpbc Total loading time: 0 Render date: 2024-04-25T04:25:44.545Z Has data issue: false hasContentIssue false
  • English
  • Français

Visualization of electrons and holes localized in the gate thin film of metal-oxide nitride-oxide semiconductor type flash memory by using scanning nonlinear dielectric microscopy

Published online by Cambridge University Press:  01 February 2011

Koichiro Honda  and
Yasuo Cho
Koichiro Honda
Affiliation:
Nano-electric Materials Lab. Fujitsu Laboratories Ltd., 10–1 Morinosato-Wakamiya, Atsugi 243–0197, Japan Research Institute of Electrical Communication, Tohoku University, 2–1–1 Katahira, Aobaku, Sendai 980–8577, Japan
Yasuo Cho
Affiliation:
Research Institute of Electrical Communication, Tohoku University, 2–1–1 Katahira, Aobaku, Sendai 980–8577, Japan
Get access

Abstract

We used scanning nonlinear dielectric microscopy to observe the position of electrons and holes in the gate SiO2-Si3N4-SiO2 (ONO) film of metal-oxide-nitride-oxide semiconductor type Flash memory. The electrons were detected in the Si3N4 part of the ONO film. The holes, on the other hand, were found in the Si3N4 film as well as in the bottom SiO2 film.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 803: Symposia GG/HH – Advanced Characterization Techniques for Data Storage Materials – Phase Change and Nonmagnetic Materials for Data Storage , 2003 , GG4.2
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Eitan, B., Pavan, P., Bloom, I., Aloni, E., Frommer, A. and Finzi, D., IEEE Elec. Dev. Lett. 11, 543 (2000)Google Scholar
2. Pavan, P., Bez, R., Olive, P. and Zanoni, E., inProc. IEEE, 85, 1248 (1997)Google Scholar
3. Ingrosso, G., Selmi, L., and Sangiorge, E., in Proceedings of the Europian Solid-State Device Research Conference 2002, 189 (2002)Google Scholar
4. Cho, Y., Kirihara, A., and Saeki, T., Denshi Joho Tsushin Gakkai Ronbunshi, 78–c–1, 593 (1995) [in Japanese])Google Scholar
5. Cho, Y., Kazuta, S., and Matsuura, K., Appl. Phys. Lett. 75, 2833 (1999)Google Scholar
6. Odagawa, H., and Cho, Y., Jpn. J. Appl. Phys. Part 1 39, 5719, (2000)Google Scholar
7. Cho, Y., Fujimoto, K., Hiranaga, Y., Wagatsuma, Y., Onoe, A., Terabe, K., and Kitamura, K., Appl. Phys. Lett. 81, 4401 (2002)Google Scholar
8. Barret, R.C. and Quate, C.F., J. Appl. Phys. 70, 2725 (1991)Google Scholar