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Reliability of Nitrided Oxides in N- and P-type 4H-SiC MOS Structures

Published online by Cambridge University Press:  15 March 2011

Sumi Krishnaswami ,
Mrinal K. Das ,
Anant K. Agarwal  and
John W. Palmour
Sumi Krishnaswami
Affiliation:
Cree Inc., 4600 Silicon Drive, Durham, NC 27703 Tel: (919) 313-5980; Fax: (919) 313-5696; Email: Sumi_Krishnaswami@cree.com
Mrinal K. Das
Affiliation:
Cree Inc., 4600 Silicon Drive, Durham, NC 27703 Tel: (919) 313-5980; Fax: (919) 313-5696
Anant K. Agarwal
Affiliation:
Cree Inc., 4600 Silicon Drive, Durham, NC 27703 Tel: (919) 313-5980; Fax: (919) 313-5696
John W. Palmour
Affiliation:
Cree Inc., 4600 Silicon Drive, Durham, NC 27703 Tel: (919) 313-5980; Fax: (919) 313-5696
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Abstract

TDDB measurements of NMOS capacitor fabricated with 1200°C dry oxide with 1300°C N2O anneal were performed at 175°C and 300°C under high positive bias stress. The devices are biased into strong accumulation mode such that the field in the oxide is high enough to collect breakdown data in a reasonable period of time. We observe that at 175°C, a 100-year Mean Time to Failure (MTTF) is obtained at an electric field of 3 MV/cm in the oxide. The TDDB measurement has also been performed at 300°C where lifetime has been reduced by a few orders of magnitude, but with an acceptable 100-year MTTF. Recent reliability results on similarly oxidized MOSFETs have shown failures along the same trend as the n-type capacitors, indicating that MOSFETs and MOS capacitors can have similar reliability despite inherent processing and structural differences. PMOS capacitors fabricated with the aforementioned dry + N2O process as well as capacitors fabricated using the low DIT nitridation techniques show acceptable MTTF of 100 years at the nominal operating electric field of 3 MV/cm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 815 , 2004 , J8.4
Copyright
Copyright © Materials Research Society 2004

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References

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