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Improved Back Reflector for High Efficiency Hydrogenated Amorphous and Nanocrystalline Silicon Based Solar Cells

Published online by Cambridge University Press:  01 February 2011

Baojie Yan
Affiliation:
United Solar Ovonic Corporation, 1100 West Maple Road, Troy, Michigan 48084
Jessica M. Owens
Affiliation:
United Solar Ovonic Corporation, 1100 West Maple Road, Troy, Michigan 48084
Chun-Sheng Jiang
Affiliation:
1National Renewable Energy Laboratory, Golden, Colorado 80401
Jeffrey Yang
Affiliation:
United Solar Ovonic Corporation, 1100 West Maple Road, Troy, Michigan 48084
Subhendu Guha
Affiliation:
United Solar Ovonic Corporation, 1100 West Maple Road, Troy, Michigan 48084
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Abstract

Ag/ZnO back reflectors (BR) on specular stainless steel substrates are optimized for hydrogenated amorphous silicon germanium alloy (a-SiGe:H) and nanocrystalline silicon (nc-Si:H) solar cells. The BRs are deposited using a sputtering method. The texture of the Ag and ZnO layers is controlled by deposition parameters as well as chemical etching with diluted HCl. The surface morphology is investigated by atomic force microscopy. The scattered light intensity from a He-Ne laser, which illuminates the sample surface perpendicularly, is measured at different angles. Finally, a-SiGe:H and nc-Si:H solar cells are deposited on the BR substrates prepared under various conditions. For a-SiGe:H bottom cells, the improved BR with large micro-features leads to an enhanced open-circuit voltage. For the nc-Si:H solar cells, large micro-features on the improved BR eliminate interference fringes otherwise observed in the quantum efficiency measurement and result in high short circuit current density. The result is consistent with an enhanced scattered light intensity. Hence, the cell performance was improved. We also deposited a-Si:H/a-SiGe:H/nc-Si:H triple-junction cells on the optimized BR and achieved a high initial active-area efficiency of 14.6%.

Type
Research Article
Copyright
Copyright © Materials Research Society 2005

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References

[1] Banerjee, A. and Guha, S., J. Appl. Phys. 69, 1030 (1991).10.1063/1.347418Google Scholar
[2] Yang, J., Banerjee, A., and Guha, S., Appl. Phys. Lett. 70, 2975 (1997).10.1063/1.118761Google Scholar
[3] Shah, A.V., Meier, J., Vallat-Sauvain, E., Wyrsch, N., Kroll, U., Droz, C., and Graf, U., Solar Energy Materials & Solar Cells 78, 469 (2003).10.1016/S0927-0248(02)00448-8Google Scholar
[4] Yan, B., Yue, G., Yang, J., Banerjee, A., and Guha, S., Mater. Res. Soc. Symp. Proc. 762, 309 (2003).Google Scholar
[5] Yan, B., Yue, G., Lord, K., Banerjee, A., and Guha, S., Proc. of 3rd World Conf. on Photovoltaic Energy Conversion (Osaka, Japan, 2003), p. 2773.Google Scholar
[6] Müller, J., Schöpe, G., Kluth, O., Rech, B. Ruske, M., Trube, J., Szyszka, B., Höing, Th., Jiang, X., and Bräuer, G., Proc. of 28th IEEE Photovoltaic Specialist Conf. (Anchorage, AK, 2000), p. 758.Google Scholar
[7] Yan, B., Yue, G., Yang, J., Guha, S., Williamson, D. L., Han, D., and Jiang, C.-S., Appl. Phys. Lett. 85, 1955 (2004).10.1063/1.1788877Google Scholar