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Spatially Indirect Optical Transitions in Semiconductor Multiple Quantum Wires

Published online by Cambridge University Press:  28 February 2011

J. S. Weiner ,
G. Danan ,
A. Pinczuk ,
J. Valladares ,
L. N. Pfeiffer  and
K. West
J. S. Weiner
Affiliation:
AT&T Bell Laboratories 600 Mountain Avenue Murray Hill, NJ 07974
G. Danan
Affiliation:
AT&T Bell Laboratories 600 Mountain Avenue Murray Hill, NJ 07974
A. Pinczuk
Affiliation:
AT&T Bell Laboratories 600 Mountain Avenue Murray Hill, NJ 07974
J. Valladares
Affiliation:
AT&T Bell Laboratories 600 Mountain Avenue Murray Hill, NJ 07974
L. N. Pfeiffer
Affiliation:
AT&T Bell Laboratories 600 Mountain Avenue Murray Hill, NJ 07974
K. West
Affiliation:
AT&T Bell Laboratories 600 Mountain Avenue Murray Hill, NJ 07974
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Abstract

In optical experiments with laterally patterned modulation-doped GaAs/AlGaAs quantum wells we observe spatially separate confinement of electrons and holes to one-dimensional quantum wires. We determine the one-dimensional subband spacing and Fermi energy from inelastic light scattering and photoluminescence spectra. From these measurements we directly determine the one-dimensional electron density.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 160 , 1989 , 745
Copyright
Copyright © Materials Research Society 1990

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References

1Cibert, J., Petroff, P. M., Dolan, G. J., Pearton, S. J., Gossard, A. C. and English, J. H., Appl. Phys. Lett. 49, 1275 (1986).Google Scholar
2Kash, K., Scherer, A., Worlock, J. M., Craighead, H. G. and Tamargo, M. C., Appl. Phys. Lett. 49, 1043 (1986).Google Scholar
3Temkin, H., Dolan, G. J., Panish, M. B. and Chu, S. N. G., Appl. Phys. Lett. 50, 413 (1987).Google Scholar
4Gershoni, D., Temkin, H., Dolan, G., Dunsmuir, J., Chu, S. N. G. and Panish, M. B., Appl. Phys. Lett. 53, 995 (1988).Google Scholar
5Tsuchiya, M., Gaines, J. M., Yan, R. H., Simes, R. J., Holtz, P. O., Coldren, L. A. and Petroff, P. M., Phys. Rev. Lett. 62, 466 (1989).Google Scholar
6Kohl, M., Heitmann, D., Grambow, P. and Ploog, K., Phys. Rev. B 37, 10927 (1988).Google Scholar
7Kohl, M., Heitmann, D., Grambow, P. and Ploog, K., Phys. Rev. Lett. 63, 2124 (1989).Google Scholar
8Hansen, W., Horst, M., Kotthaus, J. P., Sikorski, U. Merkt Ch. and Ploog, K., Phys. Rev. Lett. 58, 2586 (1987).Google Scholar
9Sikorski, Ch. and Merkt, U., Phys. Rev. Lett. 62, 2164 (1989).Google Scholar
10Scherer, A., Roukes, M. L., Craighead, H. G., Ruthen, R. M., Beebe, E. D. and Harbison, P., Appl. Phys. Lett. 51, 2133 (1987).Google Scholar
11Pinczuk, A. and Shah, J., Solid State Commun. 50, 735 (1984).Google Scholar
12Laux, S. E., Frank, D. J. and Stern, F., Surf. Sci. 196, 101 (1988).Google Scholar