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Thermoelectric Properties of p and n-type Nanocrystalline Silicon Nanowires with High Doping Levels

Published online by Cambridge University Press:  11 January 2012

F. Suriano
Affiliation:
Institute of Microelectronics and Microsystems, CNR, Via Gobetti 101, I-40129 Bologna, Italy
M. Ferri
Affiliation:
Institute of Microelectronics and Microsystems, CNR, Via Gobetti 101, I-40129 Bologna, Italy
S. Solmi
Affiliation:
Institute of Microelectronics and Microsystems, CNR, Via Gobetti 101, I-40129 Bologna, Italy
L. Belsito
Affiliation:
Institute of Microelectronics and Microsystems, CNR, Via Gobetti 101, I-40129 Bologna, Italy
A. Roncaglia
Affiliation:
Institute of Microelectronics and Microsystems, CNR, Via Gobetti 101, I-40129 Bologna, Italy
E. Romano
Affiliation:
CNISM and Department of Materials Science, University of Milano – Bicocca, Via Cozzi 53, 20125 Milano, Italy
D. Narducci
Affiliation:
CNISM and Department of Materials Science, University of Milano – Bicocca, Via Cozzi 53, 20125 Milano, Italy
G. Cerofolini
Affiliation:
CNISM and Department of Materials Science, University of Milano – Bicocca, Via Cozzi 53, 20125 Milano, Italy
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Abstract

An experimental investigation about the thermoelectric properties of heavily doped p ad n-type nanocrystalline silicon nanowires (NWs) is described. The NWs are produced with low cost CMOS compatible processes, highly customizable in terms of cross-section and placement, which enables the fabrication of both stacked NWs in nearly vertical arrays within nanostructured templates built with SiO2/Si3N4 thin films and individual, freestanding NWs suited for thermal conductivity measurements. The cross-section dimensions of the investigated NWs range between 30 and 120 nm in size and up to about 2 cm in length. The structure of the NWs, as shown by SEM/TEM observations, is nanocrystalline with average size of the nanocrystals in one dimension that is comparable with the nanowire diameter. On the NWs, Seebeck coefficient, electrical resistivity and thermal conductivity have been measured, yielding thermoelectric figure of merit (ZT) values of 0.2 at 300 K for the best case.

Type
Research Article
Copyright
Copyright © Materials Research Society 2012

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References

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