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n-Type Doping of Diamond

Published online by Cambridge University Press:  01 February 2011

Satoshi Koizumi
Satoshi Koizumi*
Affiliation:
koizumi.satoshi@nims.go.jp, NIMS, Optical Sensor Group, 1-1 Namiki, Tsukuba, 305-0044, Japan
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Abstract

n-Type doping of diamond is one of the most important issues for electronic application of diamond. Phosphorus is the best candidate as an n-type dopant at this moment. We have succeeded to grow high quality phosphorus doped diamond thin films on {111} diamond substrates. Although the ionization energy of phosphorus donor is large (0.57 eV), the n-type conductivity is clearly observed by Hall measurements. The Hall mobility is as high as 660 cm2/V-sec at room temperature. In this paper, current status of n-type diamond research are mentioned mainly focused on the growth of high mobility n-type diamond and its electrical properties. The Hall measurements performed in a wide temperature range gives detailed information about the n-type conductivity nature of phosphorus doped diamond.

Keywords

diamondsemiconductingchemical vapor deposition (CVD) (deposition)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 956: Symposium J – Diamond Electronics—Fundamentals to Applications , 2006 , 0956-J04-01
Copyright
Copyright © Materials Research Society 2007

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References

REFERENCES

1. Kajihara, S. A., Antonelli, A. and Bernholc, J., Physica B, 185 (1–4), 144–149 (1993).Google Scholar
2. Alexenko, A. E. and Spitsyn, B. V., Diamond Relat. Mater., 1, 705–709 (1992).Google Scholar
3. Kamo, M., Yurimoto, H., Ando, T. and Sato, Y.; in Messier, R., Glass, J. T., Butler, J. E. and Roy, R. (eds.), Proc. 2nd Int. Conf. on New Diamond Science and Technology, (Materials Research Society, Pittsburgh,(1991) p. 637.Google Scholar
4. Okano, K., Kiyota, H., Iwasaki, T., Nakamura, Y., Akiba, Y., Kurosu, T., Iida, M. and Nakamura, T.; Appl. Phys. A, 51, 344–346 (1990).Google Scholar
5. Koizumi, S., Ozaki, H., Kamo, M., Sato, Y. and Inuzuka, T., Appl. Phys. Lett., 71, 1064–1067 (1997).Google Scholar
6. Koizumi, S., Kamo, M., Sato, Y., Mita, S., Sawabe, A., Reznik, A., Uzan-Saguy, C., R.Kalish, Diamond Relat. Mater., 7 (2–5), 540–544 (1998).Google Scholar
7. Koizumi, S., phys. stat. sol. (a) 172, 71–78 (1999).Google Scholar
8. Koizumi, S., SEMICONDUCTORS AND SEMIMETALS 76, 239–259 (2003).Google Scholar
9. Katagiri, M., Isoya, J., Koizumi, S. and Kanda, H., Appl. Phys. Lett., 85 (26), 6365–6367 (2004).Google Scholar
10. Nesládek, M., Meykens, K., Haenen, K., Knuyt, G., Stals, L. M., Teraji, T., and Koizumi, S., Phys. Rev. B 59, 14852 (1999).Google Scholar
11. Gheeraert, E., Koizumi, S., Teraji, T., and Kanda, H., Solid State Commun. 113, 577 (2000).Google Scholar
12. Sternschulte, H., Thonke, K., Sauer, R., and Koizumi, S., Phys. Rev. B 59, 12924 (1999).Google Scholar
13. Hasegawa, M., Teraji, T. and Koizumi, S., Appl. Phys. Lett., 79, 3068 (2001).Google Scholar
14. Koizumi, S., Watanabe, K., Hasegawa, M. and Kanda, H., Science, 292, 1899, (2001).Google Scholar
15. BenMoussa, A., Schühle, U., Haenen, K., Nesládek, M., Koizumi, S. and and Hochedez, J.-F., phys. stat. sol. (a) 201, No. 11, 2536–2541 (2004).Google Scholar
16. BenMoussa, A., Schühle, U, Scholze, F, Kroth, U, Haenen, K, Saito, T, Campos, J, Koizumi, S, Laubis, C, Richter, M, Mortet, V, Theissen, A and Hochedez, J F, Meas. Sci.Technol. 17, 913–917 (2006).Google Scholar
17. Teukam, Z., Chevallier, J., Saguy, C., Kalish, R., Ballutaud, D., Barbe, M., Jomard, F., Tromson-Carli, A., Cytermann, C., Butler, J.E., Bernard, M., Baron, C., Deneuville, A., Nature Materials 2 (7) 482–486 (2003).Google Scholar
18. Kato, H., Yamasaki, S. and Okushi, H., Appl. Phys. Lett., 86 (22), 222–111 (2005).Google Scholar
19. Koizumi, S., Teraji, T., Kanda, H., Diamond Relat. Mater., 9, 935 (2000).Google Scholar
20. Teraji, T., Katagiri, M., Koizumi, S., Ito, T., and Kanda, H., Jpn. J. Appl. Phys. 42, L882(2003).Google Scholar
21. Nava, F., Canali, C., Jacoboni, C., Reggiani, L., and Kozlov, S. F., Solid State Commun. 33, 475 (1980).Google Scholar