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4H-SiC P+N UV Photodiodes: Influence of Temperature and Irradiation

Published online by Cambridge University Press:  10 June 2014

B. Bérenguier ,
L. Ottaviani ,
S. Biondo ,
O. Palais ,
M. Lazar ,
F. Milesi ,
F. Torregrosa ,
E. Kalinina ,
A. Lebedev  and
W. Vervisch
...Show all authors
B. Bérenguier*
Affiliation:
IM2NP (UMR 7334) – Aix-Marseille Université, Case 231, 13397 Marseille Cedex 20, France
L. Ottaviani*
Affiliation:
IM2NP (UMR 7334) – Aix-Marseille Université, Case 231, 13397 Marseille Cedex 20, France
S. Biondo
Affiliation:
IM2NP (UMR 7334) – Aix-Marseille Université, Case 231, 13397 Marseille Cedex 20, France
O. Palais
Affiliation:
IM2NP (UMR 7334) – Aix-Marseille Université, Case 231, 13397 Marseille Cedex 20, France
M. Lazar
Affiliation:
AMPERE (UMR 5005) – INSA de Lyon, 21 Av. Capelle, 69621 Villeurbanne, France
F. Milesi
Affiliation:
CEA LETI/MINATEC, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France
F. Torregrosa
Affiliation:
Ion Beam Services, Rue Gaston Imbert Prolongée, 13790 Peynier, France
E. Kalinina
Affiliation:
Laboratory of Physics of Semiconductors Devices, IOFFE Institute, 194021 St Petersburg, Russia
A. Lebedev
Affiliation:
Laboratory of Physics of Semiconductors Devices, IOFFE Institute, 194021 St Petersburg, Russia
W. Vervisch
Affiliation:
IM2NP (UMR 7334) – Aix-Marseille Université, Case 231, 13397 Marseille Cedex 20, France
A. Lyoussi
Affiliation:
CEA/DEN/CAD/DER/SPEx, 13108 St Paul les Durance Cedex
*
abaptiste.berenguier@im2np.fr,
blaurent.ottaviani@im2np.fr,
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Abstract

4H-SiC p+n photodiodes based on ultrathin-junctions have been fabricated with distinct processes for the p+-region creation: either with Aluminium conventional ion implantation, or with Boron Plasma Ion Immersion Implantation. Spectral sensitivity measurements were performed at several temperatures from room temperature up to 340°C, with incident wavelengths ranging from 200 to 400 nm. Both responses are characterized by a stability between 200 and 270 nm, and a important increase with temperature between 270 and 380 nm. This fact has to be related to the two different kinds of optical absorption phenomena in SiC with respect to the wavelength, which are direct and indirect (phonon assisted) transitions. When decreasing the temperature, we noticed a hysteresis effect, which could be due to charge trapping by temperature activated defects. After strong proton and electron irradiations, the diodes showed a stability of the response below 270 nm, making them suitable for use in harsh environments. Simulation was performed at room temperature, with a good correlation between simulated and experimental room temperature curves.

Keywords

radiation effectsdevicesoptoelectronic
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1693: Symposium DD – Silicon Carbide–Materials, Processing and Devices , 2014 , mrss14-1693-dd03-07
Copyright
Copyright © Materials Research Society 2014 

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References

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