Hostname: page-component-8448b6f56d-c47g7 Total loading time: 0 Render date: 2024-04-24T03:51:37.650Z Has data issue: false hasContentIssue false
  • English
  • Français

Room Temperature Light Induced Electron Spin Resonauce In Undoped Hydrogenated Amorphous Silicon (a-Si:H)

Published online by Cambridge University Press:  28 February 2011

R. Pandya ,
S. Zafar  and
E. A. Schiff
R. Pandya
Affiliation:
Department of Physics, Syracuse University, Syracuse, New York 13244-1130 U. S. A.
S. Zafar
Affiliation:
Department of Physics, Syracuse University, Syracuse, New York 13244-1130 U. S. A.
E. A. Schiff
Affiliation:
Department of Physics, Syracuse University, Syracuse, New York 13244-1130 U. S. A.
Get access

Abstract

The effects of illumination upon the absorption electron spin resonance spectrum of the dangling bond defect system have been studied in undoped amorphous hydrogenated silicon (a-Si:H). A small shift of the inhomogeneous envelope of the system towards higher g-value is observed at roomtemperature. The shift is not accompanied by a significant change in the signal. Results are reported which indicate that this shift is not due to illumination induced heating of the specimen or calibration changes of the spectrometer. The results may be related to previously reported optical bias effects upon transient photocurrent and photoinduced absorption studies.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 70: Symposium E – Materials Issues in Amorphous-Semiconductor Technology , 1986 , 155
Copyright
Copyright © Materials Research Society 1986

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Street, R. A. and Biegelsen, D. K., in The Physics of Hydrogenated Amorphous Silicon II, edited by Joannopoulos, J. D. and Lucovsky, G. (Springer-Verlag, Berlin, 1984), p. 195.Google Scholar
2. Taylor, P. C., in Semiconductors and Semimetals, vol.23C, Hydrogenated Amorphous Silicon: Part C (volume editor Pankove, J., Academic Press, Orlando, 1984).Google Scholar
3. Pandya, R. and Schiff, E. A., J. Non-Cryst. Solids 59&60, 297 (1983).CrossRefGoogle Scholar
4. Pandya, R., Schiff, E. A., and Conrad, K. A., J. Non-Cryst. Solids 66, 193 (1984).Google Scholar
5. Pandya, R. and Schiff, E. A., J. Non-Cryst. Solids 77&78, 623 (1984).Google Scholar
6. Pfost, D., Vardeny, Z., and Tauc, J., Phys. Rev. Lett. 52, 376 (1984).Google Scholar
7. Pfost, D., Vardeny, Z., and Tauc, J., J. Non-Cryst. Solids 66, 223 (1984).Google Scholar
8. Wronski, C. R. and Daniel, R. E., Phys. Rev. B23, 1794 (1981).Google Scholar
9. Stutzmann, M. and Biegelsen, D. K., Phys. Rev. B28, 6256 (1983).Google Scholar
10. Vahalia, U., Ferrario, J., and Schiff, E. A., submitted for publication.Google Scholar