Hostname: page-component-8448b6f56d-wq2xx Total loading time: 0 Render date: 2024-04-24T12:12:13.951Z Has data issue: false hasContentIssue false
  • English
  • Français

Dielectric Relaxation and Microwave Dielectric Properties of Bi2O3–ZnO–Ta2O5 Ceramics

Published online by Cambridge University Press:  31 January 2011

Hyuk-Joon Youn ,
Clive Randall ,
Ang Chen ,
Tom Shrout  and
Michael T. Lanagan
Hyuk-Joon Youn
Affiliation:
Center for Dielectric Studies, Material Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802
Clive Randall
Affiliation:
Center for Dielectric Studies, Material Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802
Ang Chen
Affiliation:
Center for Dielectric Studies, Material Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802
Tom Shrout
Affiliation:
Center for Dielectric Studies, Material Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802
Michael T. Lanagan
Affiliation:
Center for Dielectric Studies, Material Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802
Get access

Abstract

The permittivity of two primary phases within the Bi2O3–ZnO–Ta2O5 system was measured from 100 Hz to approximately 8.7 GHz. A cubic pyrochlore (Bi3/2Zn1/2)(Zn1/2Ta3/2)O7 phase (a phase) exhibited a dielectric constant of 71 at low frequency which decreased to 64 at approximately 10 GHz. A lower symmetry zirconolite Bi2(Zn1/3Ta2/3)2O7 phase (β phase) was also measured and had a frequency independent dielectric constant of 60. The temperature dependence of the capacitance (τC), measured from −55 to 120 °C, was 78 ppm/°C for the β phase and nonlinear for the α phase having no unique slope. The primary difference in dielectric properties between these two phases was a low-temperature relaxation of the α phase, which is modeled as a basic Debye-type relaxation.

Type
Articles
Information
Journal of Materials Research , Volume 17 , Issue 6 , June 2002 , pp. 1502 - 1506
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1.Kagata, H., Inoue, T., Kato, J., and Kameyama, I., Jpn. J. Appl. Phys. 31, 3152 (1992).CrossRefGoogle Scholar
2.Cho, S.Y., Youn, H.J., Kim, D.W., Kim, T.G., and Hong, K.S., J. Am. Ceram. Soc. 81, 3038 (1998).CrossRefGoogle Scholar
3.Randall, C.A., Lanagan, M.T., Yoon, H.J., Reaney, I., Sogabe, H., Nino, J., Baker, A., and Shrout, T., Proc. of the Tenth US-Japan Seminar on Dielectric and Piezoelectric Ceramics, Providence, RI.Google Scholar
4.Subramanian, M.A., Aravamudan, G., and Rao, G.V. Subba, Prog. Solid State Chem. 15, 55 (1983).CrossRefGoogle Scholar
5.Sleight, A.W., Inorg. Chem. 7, 1704 (1969).CrossRefGoogle Scholar
6.Valant, M. and Davies, P.K., J. Am. Ceram. Soc. 83(1), 147 (2000).CrossRefGoogle Scholar
7.White, T.J., Am. Mineral. 69, 1156 (1984).Google Scholar
8.Levin, I., Amos, T.G., Nino, J.C., Vanderah, T.A., Randall, C.A., and Lanagan, M.T., J. Chem. (submitted).Google Scholar
9.Shannon, R.D., Acta. Crystallogr., Sect. A: Found. Crystallogr. A 32, 751 (1976).CrossRefGoogle Scholar
10.Levin, I., Amos, T.J., Nino, J.C., Vanderah, T.A., Reaney, I.M., Randall, C.A., and Lanagan, M.T., J. Mater. Res. (submitted).Google Scholar
11.Youn, H-J., Sogabe, T., Randall, C.A., Shrout, T.R., and Lanagan, M.T., J. Am. Ceram. Soc. 84, 2557 (2001).CrossRefGoogle Scholar
12.Baker-Jarvis, J. and Jones, C.A., in Low-Dielectric Constant Materials-Synthesis and Applications in Microelectronics, edited by Lu, T-M., Murarka, S.P., Kuan, T.S., and Ting, C.H. (Mater. Res. Soc. Proc. 381, Pittsburgh, PA, 1995), pp. 153–164.Google Scholar
13.Janezic, M.D. and Baker-Jarvis, J., IEEE Trans. Microwave Theory Tech. 47, 2014 (1999).CrossRefGoogle Scholar
14.Semouchkina, E., Cao, W., Lanagan, M., Mittra, R., and Yu, W., Microwave Opt. Tech. Lett. 29, 21 (2001).CrossRefGoogle Scholar
15.Ligthart, L.P., IEEE Trans. Microwave Theory Tech. 31, 249 (1983).CrossRefGoogle Scholar
16.Cann, D.P., Randall, C.A., and Shrout, T.R., Solid State Commun. 100, 529 (1996).CrossRefGoogle Scholar
17.Nino, J.C., Lanagan, M.T., and Randall, C.A., J. Appl. Phys. 89, 4512 (2001).CrossRefGoogle Scholar
18.Kamba, S., Porokhonskyy, V., Pashkin, A., Bovtun, V., Petzelt, J., Nino, J.C., Trolier-McKinstry, S., Randall, C.A., and Lanagan, M.T., Phys. Rev. B (submitted).Google Scholar
19.Wang, X., Wang, H., and Yao, X, J. Am. Ceram. Soc. 80, 2745 (1997).CrossRefGoogle Scholar
20.Harrop, P.J., J. Mater. Sci. 4, 370 (1969).CrossRefGoogle Scholar