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Spatial Ordering of As Clusters Due to Indium Delta-Doping of LTMBE GaAs

Published online by Cambridge University Press:  10 February 2011

N. A. Bert ,
V. V. Chaldyshev ,
N. N. Faleev ,
A. E. Kunitsyn ,
V. V. Tret'yakov ,
D. I. Lubyshev ,
V. V. Preobrazhenskii  and
B R. Semyagin
N. A. Bert
Affiliation:
Ioffe Physical-Technical Institute, St.Petersburg 194021, Russia
V. V. Chaldyshev
Affiliation:
Ioffe Physical-Technical Institute, St.Petersburg 194021, Russia
N. N. Faleev
Affiliation:
Ioffe Physical-Technical Institute, St.Petersburg 194021, Russia
A. E. Kunitsyn
Affiliation:
Ioffe Physical-Technical Institute, St.Petersburg 194021, Russia
V. V. Tret'yakov
Affiliation:
Ioffe Physical-Technical Institute, St.Petersburg 194021, Russia
D. I. Lubyshev
Affiliation:
Institute of Semiconductor Physics, Novosibirsk 630090, Russia
V. V. Preobrazhenskii
Affiliation:
Institute of Semiconductor Physics, Novosibirsk 630090, Russia
B R. Semyagin
Affiliation:
Institute of Semiconductor Physics, Novosibirsk 630090, Russia
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Abstract

We have shown that two-dimensional layers of arsenic nano-clusters separated by cluster-free GaAs matrix can be formed using indium delta-doping of GaAs films grown by molecular beam epitaxy at low (200°C) temperature. Spatially ordered structures of As clusters have been obtained in the epitaxial LT GaAs films doped with Si donors, Be acceptors and undoped as well.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 417: Symposium EE – Optoelectronic Materials-Ordering, Composition Modulation, and Self-Assembled … , 1995 , 135
Copyright
Copyright © Materials Research Society 1996

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