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Near Surface Structure of Ion Implanted Si Studied by Grazing Incidence X-Ray Scattering

Published online by Cambridge University Press:  21 February 2011

G. Wallner ,
E. Burkel ,
H. Metzger ,
J. Peisl  and
S. Rugel
G. Wallner
Affiliation:
Sektion Physik, Ludwig-Maximilians-Universität München, D-8000 MüNCHEN 22, FRG
E. Burkel
Affiliation:
Sektion Physik, Ludwig-Maximilians-Universität München, D-8000 MüNCHEN 22, FRG
H. Metzger
Affiliation:
Sektion Physik, Ludwig-Maximilians-Universität München, D-8000 MüNCHEN 22, FRG
J. Peisl
Affiliation:
Sektion Physik, Ludwig-Maximilians-Universität München, D-8000 MüNCHEN 22, FRG
S. Rugel
Affiliation:
Sektion Physik, Ludwig-Maximilians-Universität München, D-8000 MüNCHEN 22, FRG
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Abstract

X-rays incident on a surface under grazing angle may undergo total external reflection and excite an interior wave field damped exponentially into the bulk. These evanescent waves are a sensitive probe for the study the real structure in the near surface region. We report results on the influence of implantation defects on Bragg diffracted and on diffuse intensities. By detailed comparison of Bragg intensities with predictions of dynamical scattering theory we detect the presence of amorphous layers and determine their thickness. For the first time defect induced diffuse scattering underconditions of grazing incidence andexit is observed and compared to recent theoretical results. Strength and symmetry of implantation induced defects can be determined as well as their depth distribution which is compared to results of a TRIM simulation: the defect distribution is found to agree with that of the deposited collisional energy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 143: Symposium V – Synchrotron Radiation in Materials Research , 1988 , 19
Copyright
Copyright © Materials Research Society 1989

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References

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