Hostname: page-component-76fb5796d-vvkck Total loading time: 0 Render date: 2024-04-25T10:55:49.292Z Has data issue: false hasContentIssue false
  • English
  • Français

Electronic Structure of Epitaxial Silicon Interfaces

Published online by Cambridge University Press:  16 February 2011

Hideaki Fujitani  and
Setsuro Asano
Hideaki Fujitani
Affiliation:
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-01, Japan
Setsuro Asano
Affiliation:
College of Arts and Sciences, University of Tokyo, 3-8-1 Komaba, Meguro, Tokyo 153, Japan
Get access

Abstract

Using the linear muffin-tin orbital method in the atomic sphere approximation (LMTO-ASA), we studied the electronic structure of the Si(111) interface for four different materials: CaF2, NiSi2, CoSi2, and YSi2. We examined how the interface states and Schottky barrier height depend on the interface atomic structure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 193: Symposium Q – Atomic Scale Calculations of Structure in Materials , 1990 , 77
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Tung, R. T., Phys. Rev. Lett. 52, 461 (1984).Google Scholar
2. Fujitani, H. and Asano, S., J. Phys. Soc. Jpn. 57, 2253 (1988).Google Scholar
3. Das, G. P., Blöchl, P., Christensen, N. E., and Andersen, O. K., in Metallization and Metal-Semiconductor Interfaces, edited by Batra, I. P. (Plenum, New York, 1988); G. P. Das, P. Blöchl, 0. K. Andersen, N. E. Christensen, and O. Gunnarsson, Phys. Rev. Lett. 63, 1168 (1989).Google Scholar
4. Stiles, M. D. and Hamann, D. R., Phys. Rev. B 40, 1349 (1989).Google Scholar
5. Hamann, D. R., Phys. Rev. Lett. 60, 313 (1988).Google Scholar
6. Hoek, P. J. van den, Ravenek, W., and Baerends, E. J., Phys. Rev. Lett. 10, 1743 (1988); Surf. Sci. 205, 549 (1988).Google Scholar
7. Tung, R. T., J. Vac. Sci. Technol. A 7, 598 (1989).Google Scholar
8. Tu, K. N., Thompson, R. D., and Tsaur, B. Y., Appl. Phys. Lett. 38, 626 (1981).Google Scholar
9. Baptist, R., Ferrer, S., Grenet, G., and Poon, H. C., Phys. Rev. Lett. 64, 311 (1990).Google Scholar
10. McLean, A. B. and Himpsel, F. J., Phys. Rev. B 39, 1457 (1989).Google Scholar
11. Fujitani, H. and Asano, S., Phys. Rev. B 40, 8357 (1989).Google Scholar
12. Andersen, O. K., Phys. Rev. B 22, 3060 (1975); O. K. Andersen, O. Jepsen, and D. Glötzel, in Highlights of Condensed Matter Theory, edited by F. Bassani, F. Fumi, and M. P. Tosi (North-Holland, Amsterdam, 1985), p. 59.Google Scholar
13. Janak, J. F., Moruzzi, V. L., and Williams, A. R., Phys. Rev. B 12, 1257 (1975).Google Scholar
14. Zegenhagen, J. and Patel, J. R., Phys. Rev. B 41, 5315 (1990).Google Scholar
15. Fujitani, H. and Asano, S., Phys. Rev. B (in press).Google Scholar