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Time-Resolved Raman Scattering and Transmission Measurements During Pulsed Laser Annealing

Published online by Cambridge University Press:  15 February 2011

A. Compaan
Affiliation:
Department of Physics, Kansas State University, Manhattan, Kansas, 66506
H. W. LO
Affiliation:
Department of Physics, Kansas State University, Manhattan, Kansas, 66506
A. Aydinli
Affiliation:
Department of Physics, Kansas State University, Manhattan, Kansas, 66506
M. C. Lee
Affiliation:
Department of Physics, Kansas State University, Manhattan, Kansas, 66506
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Abstract

Raman Scattering from a 7 nsec pulsed dye laser has been used to determine the onset of recrystallization following an 8 nsec dye laser excitation pulse in ion-implanted silicon. We find essentially complete recrystallization 59 nsec after the first excitation pulse and from Stokes-anti-Stokes ratios we find at 59 nsec a crystalline lattice temperature of 600 ± 200° C. Time-resolved transmission measurements at λ = 1.15 µm also demonstrate that no molten phase has occurred even though the usual reflectivity enhancement is observed.

Type
Research Article
Copyright
Copyright © Materials Research Society 1981

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References

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