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unneling effects in InAs/GaInSb superlattice infrared photodiodes

Published online by Cambridge University Press:  10 February 2011

U. Weimar ,
F. Fuchs ,
E. Ahlswede ,
J. Schmitz ,
W. Pletschen ,
N. Herres  and
M. Walther
U. Weimar
Affiliation:
Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastrasse 72, D-79108 Freiburg, Germany
F. Fuchs
Affiliation:
Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastrasse 72, D-79108 Freiburg, Germany
E. Ahlswede
Affiliation:
Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastrasse 72, D-79108 Freiburg, Germany
J. Schmitz
Affiliation:
Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastrasse 72, D-79108 Freiburg, Germany
W. Pletschen
Affiliation:
Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastrasse 72, D-79108 Freiburg, Germany
N. Herres
Affiliation:
Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastrasse 72, D-79108 Freiburg, Germany
M. Walther
Affiliation:
Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastrasse 72, D-79108 Freiburg, Germany
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Abstract

The optical and electrical properties of InAs/GaInSb superlattice mesa photodiodes with a cutoff wavelength around 8 pim are investigated. The influence of the surface potential at the mesa sidewalls on the device properties was studied by fabricating gate-controlled diodes. At least two mechanisms determining the dark current in the reverse bias region can be identified. At high reverse biases bulk bandto- band tunneling dominates while the current at low reverse biases is most likely governed by surface effects. Bulk interband tunneling is further investigated by applying magnetic fields B up to 7 T parallel and perpendicular to the electric field E across the p-n junction.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 484: Symposium F – Infrared Applications of Semiconductors II , 1997 , 123
Copyright
Copyright © Materials Research Society 1998

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