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Analysis and design of a high-gain 100–180-GHz differential power amplifier in 130 nm SiGe BiCMOS

Published online by Cambridge University Press:  10 February 2017

Faisal Ahmed ,
Muhammad Furqan ,
Klaus Aufinger  and
Andreas Stelzer
Faisal Ahmed*
Affiliation:
Johannes Kepler University Linz, Altenberger Str. 69, 4040 Linz, Austria. Phone: +43 732 2468 6409
Muhammad Furqan
Affiliation:
Johannes Kepler University Linz, Altenberger Str. 69, 4040 Linz, Austria. Phone: +43 732 2468 6409
Klaus Aufinger
Affiliation:
Infineon Technologies, Am Campeon, 85579 Neubiberg, Germany
Andreas Stelzer
Affiliation:
Johannes Kepler University Linz, Altenberger Str. 69, 4040 Linz, Austria. Phone: +43 732 2468 6409
*
Corresponding author: F. Ahmed Email: f.ahmed@nthfs.jku.at
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Abstract

This paper presents the design and measurement results of a high-gain D-band broadband power amplifier (PA) implemented in a 130 nm SiGe BiCMOS technology. The topology of the PA is based on four differential cascode stages with interstage matching networks. A detailed analysis of the frequency behavior of the transimpedance-gain of the common-base stage of the cascode is presented by means of small-signal equivalent circuits, when the proposed four-reactance wideband matching network is used for output matching to the subsequent stage. The effect of the size of the active devices, in achieving a desired gain, bandwidth, and output power, is investigated. The fabricated D-band amplifier is characterized on-wafer demonstrating a peak differential gain and output power of about 25 dB and 11 dBm, respectively, while utilizing a DC power of 262 mW from a 2.7 V supply. The 3-dB small-signal bandwidth of the PA spans from 100 to 180 GHz (limited by the measurement setup), making it the first SiGe-based PA to cover the entire D-band frequency range. The PA achieves a state-of-the-art differential gain-bandwidth product of around 1.4 THz and the highest GBW/PDC ratio of 5.2 GHz/mW among all D-Band Si-based PAs.

Keywords

Circuit design and applicationsModelingSimulation and characterizations of devices and circuits
Type
Research Papers
Information
International Journal of Microwave and Wireless Technologies , Volume 9 , Special Issue 6: EuMW 2016 Special Issue , July 2017 , pp. 1231 - 1239
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2017 

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