Hostname: page-component-8448b6f56d-dnltx Total loading time: 0 Render date: 2024-04-24T09:54:18.756Z Has data issue: false hasContentIssue false
  • English
  • Français

SONOS memory devices with ion beam modified nitride layers

Published online by Cambridge University Press:  25 May 2012

D. Simatos ,
P. Dimitrakis ,
V. Ioannou-Sougleridis ,
P. Normand ,
K. Giannakopoulos ,
B. Pecassou  and
G. BenAssayag
D. Simatos
Affiliation:
Institute of Microelectronics, NCSR “Demokritos” Attika, Greece.
P. Dimitrakis
Affiliation:
Institute of Microelectronics, NCSR “Demokritos” Attika, Greece.
V. Ioannou-Sougleridis
Affiliation:
Institute of Microelectronics, NCSR “Demokritos” Attika, Greece.
P. Normand
Affiliation:
Institute of Microelectronics, NCSR “Demokritos” Attika, Greece.
K. Giannakopoulos
Affiliation:
Institute of Microelectronics, NCSR “Demokritos” Attika, Greece.
B. Pecassou
Affiliation:
CEMES-CNRS, Toulouse, France.
G. BenAssayag
Affiliation:
CEMES-CNRS, Toulouse, France.
Get access

Abstract

In this work we examine the development of ion beam modified oxide-nitride-oxide structures formed by low-energy (1 keV) implantation of Si, N and Ar ions (1x1016 ions/cm2) into oxide-nitride gate stacks and subsequent wet-oxidation to form the blocking oxide. Transmission electron microscopy indicates that the thickness of the blocking oxide layer is strongly affected by the implantation process going from 1 nm (non-implanted sample) to 4-5 nm (N and Ar implants) and 7.5 nm (Si implant). The Si implanted stacks exhibit the highest attainable memory window (∼ 8.5 V for a 1 ms pulse regime), which involve both electron and hole storage. In contrast the thinner blocking oxide that develops to the nitrogen and argon implanted stacks limits the memory window which is due only to electron trapping. Room temperature charge retention measurements of the programming state reveal that the electron loss rate is faster in samples implanted with Si than N, allowing for a memory window of 1.7 V and 2.5 V respectively after ten years extrapolation. This retention behavior is mainly attributed to the different nature of the traps generated in the implanted materials.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1430: Symposium E – Materials and Physics of Emerging Nonvolatile Memories , 2012 , mrss12-1430-e03-01
Copyright
Copyright © Materials Research Society 2012

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Bu, J. White, M. H., Solid State Electron. 45, 113 (2001).Google Scholar
2. Wrazien, S. J., Zhao, Y., Krayer, J. D., and White, M.H. Solid State Electron. 47, 855 (2003).Google Scholar
3. Lee, C. H., Hur, S. H., Shin, Y. C., Choi, J.H., Park, D. G., Kim, K. Appl. Phys. Lett. 86, 152908, (2005).Google Scholar
4. Kittl, J. A. et al. , Microelectron Eng. 86, 1789 (2009).Google Scholar
5. Nikolaou, N., Dimitrakis, P., Normand, P., Ioannou-Sougleridis, V., Giannakopoulos, K., Mergia, K., Kukli, K., Niinistö, J., Ritala, M., Leskelä, Markku Solid State Electron. 68, 38, (2012).Google Scholar
6. Ioannou-Sougleridis, V., Dimitrakis, P., Vamvakas, V. Em. Normand, P., Bonafos, C., Schamm, S., Cherkashin, N., and Ben Assayag, G., Perego, M. and Fanciulli, M. Appl. Phys. Lett. 90, 263513 (2007).Google Scholar