Hostname: page-component-8448b6f56d-mp689 Total loading time: 0 Render date: 2024-04-23T17:33:50.067Z Has data issue: false hasContentIssue false

Seebeck and Spin Seebeck effect in Gd-doped GaN thin films for Thermoelectric Devices and Applications

Published online by Cambridge University Press:  11 August 2011

Bahadir Kucukgok
Affiliation:
Department of Optical Science and Engineering, University of North Carolina at Charlotte, NC, 28213, USA.
Liqin Su
Affiliation:
Department of Electrical and Computer Engineering, University of North Carolina at Charlotte, NC, 28213, USA.
Elisa N. Hurwitz
Affiliation:
Department of Electrical and Computer Engineering, University of North Carolina at Charlotte, NC, 28213, USA.
Andrew Melton
Affiliation:
Department of Electrical and Computer Engineering, Georgia Institute of Technology, GA, 30332, USA.
Liu Zhiqiang
Affiliation:
Department of Electrical and Computer Engineering, University of North Carolina at Charlotte, NC, 28213, USA. Semiconductor Lighting R&D Center Institute of Semiconductors Chinese Academy of Sciences, P.O. Box 912 Beijing 100083Beijing, China.
Na Lu
Affiliation:
Department of Engineering Technology, Sustainable Material and Renewable Technology (SMART) Laboratory, University of North Carolina at Charlotte NC, 28213, USA.
Ian T. Ferguson
Affiliation:
Department of Electrical and Computer Engineering, University of North Carolina at Charlotte, NC, 28213, USA.
Get access

Abstract

GaN-based dilute magnetic semiconductors (DMS) have recently been investigated for use in spintronic devices. In particular, Gd-doped GaN has shown very promising room temperature ferromagnetic behavior and potential for use in spintronics applications. III-Nitride materials have recently had their thermoelectric properties investigated; however this work has not been extended to Nitride-based DMS. Understanding the spin-calorimetric characteristics of GaN-based DMS is important to the successful development of low-power spintronic devices. In this paper the Seebeck and spin-Seebeck effect in MOCVD grown Gd-doped GaN (Gd: GaN) are investigated.

Type
Research Article
Copyright
Copyright © Materials Research Society 2011

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Takahashi, S. and Maekawa, S., “Spin current in metals and superconductors,” Journal of the Physical Society of Japan, vol. 77, pp. -, Mar 2008.Google Scholar
2. Adachi, H., Uchida, K., Saitoh, E., Ohe, J., Takahashi, S., and Maekawa, S., “Gigantic enhancement of spin Seebeck effect by phonon drag,” Applied Physics Letters, vol. 97, pp. -, Dec 20 2010.Google Scholar
3. Uchida, K., Takahashi, S., Ieda, J., Harii, K., Ikeda, K., Koshibae, W., Maekawa, S., and Saitoh, E., “Phenomenological analysis for spin-Seebeck effect in metallic magnets,” Journal of Applied Physics, vol. 105, pp. -, Apr 1 2009.Google Scholar
4. Uchida, K., Adachi, H., Ota, T., Nakayama, H., Maekawa, S., and Saitoh, E., “Observation of longitudinal spin-Seebeck effect in magnetic insulators,” Applied Physics Letters, vol. 97, pp. -, Oct 25 2010.Google Scholar
5. Maekawa, S., “MAGNETISM A flood of spin current,” Nature Materials, vol. 8, pp. 777778, Oct 2009.Google Scholar
6. Bader, S. D. and Parkin, S. S. P., “Spintronics,” Annual Review of Condensed Matter Physics, Vol 1, vol. 1, pp. 7188, 2010.Google Scholar
7. Xiao, J., Bauer, G. E. W., Uchida, K., Saitoh, E., and Maekawa, S., “Theory of magnon-driven spin Seebeck effect,” Physical Review B, vol. 81, pp. -, Jun 14 2010.Google Scholar
8. Nakayama, H., Ando, K., Harii, K., Kajiwara, Y., Yoshino, T., Uchida, K., and Saitoh, E., “Inverse Spin-Hall Effect Induced by Spin Pumping in Different Thickness Pt Films,” Ieee Transactions on Magnetics, vol. 46, pp. 22022204, Jun 2010.Google Scholar
9. Saitoh, E., Ueda, M., Miyajima, H., and Tatara, G., “Conversion of spin current into charge current at room temperature: Inverse spin-Hall effect,” Applied Physics Letters, vol. 88, pp. -, May 1 2006.Google Scholar
10. Uchida, K., Takahashi, S., Harii, K., Ieda, J., Koshibae, W., Ando, K., Maekawa, S., and Saitoh, E., “Observation of the spin Seebeck effect,” Nature, vol. 455, pp. 778781, Oct 9 2008.Google Scholar
11. Jaworski, C. M., Yang, J., Mack, S., Awschalom, D. D., Heremans, J. P., and Myers, R. C., “Observation of the spin-Seebeck effect in a ferromagnetic semiconductor,” Nature Materials, vol. 9, pp. 898903, Nov 2010.Google Scholar
12. Sinova, J., “SPIN SEEBECK EFFECT Thinks globally but acts locally,” Nature Materials, vol. 9, pp. 880881, Nov 2010.Google Scholar
13. Fert, A., “Origin, development, and future of spintronics (Nobel lecture),” Angewandte Chemie-International Edition, vol. 47, pp. 59565967, 2008.Google Scholar
14. Ong, N. P., “Solid-state physics - Recipe for spin currents,” Nature, vol. 455, pp. 741743, Oct 9 2008.Google Scholar
15. Uchida, K., Ota, T., Harii, K., Ando, K., Sasage, K., Nakayama, H., Ikeda, K., and Saitoh, E., “Spin Seebeck Effect in Ni81Fe19/Pt Thin Films With Different Widths,” Ieee Transactions on Magnetics, vol. 45, pp. 23862388, Jun 2009.Google Scholar
16. Uchida, K., Ota, T., Harii, K., Ando, K., Nakayama, H., and Saitoh, E., “Electric detection of the spin-Seebeck effect in ferromagnetic metals (invited),” Journal of Applied Physics, vol. 107, pp. -, May 1 2010.Google Scholar
17. Uchida, K., Ota, T., Harii, K., Takahashi, S., Maekawa, S., Fujikawa, Y., and Saitoh, E., “Spin-Seebeck effects in Ni81Fe19/Pt films,” Solid State Communications, vol. 150, pp. 524528, Mar 2010.Google Scholar
18. Uchida, K., Xiao, J., Adachi, H., Ohe, J., Takahashi, S., Ieda, J., Ota, T., Kajiwara, Y., Umezawa, H., Kawai, H., Bauer, G. E. W., Maekawa, S., and Saitoh, E., “Spin Seebeck insulator,” Nature Materials, vol. 9, pp. 894897, Nov 2010.Google Scholar
19. Hurwitz, E., Asghar, M., Melton, A., Kucukgok, B., Su, L., Orocz, M., Jamil, M., Lu, N., and Ferguson, I., “Thermopower Study of GaN-Based Materials for Next-Generation Thermoelectric Devices and Applications,” Journal of Electronic Materials, vol. 40, pp. 513517, 2011.Google Scholar