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Electronically Pure Single Chirality Semiconducting Single-Walled Carbon Nanotube for Large Scale Electronic Devices

Published online by Cambridge University Press:  12 January 2017

Huaping Li
Huaping Li*
Affiliation:
Atom Nanoelectronics Inc. 440 Hindry Avenue, Unit E, Inglewood, California 90301USA
*
*Email: huaping.li@atomnanoelectronics.com
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Abstract

Carbon nanotube thin film transistors (TFTs) with characteristics resembling those of TFTs constructed on amorphous silicon, low-temperature polycrystalline silicon and metal oxides were fabricated on (6,5) single chirality single-walled carbon nanotube (SWCNT) thin film deposited from electronically pure semiconducting (6,5) single chirality single-walled carbon nanotube (SWCNT) ink. This ink was extracted in industrial scale from raw SWCNTs produced using high pressure carbon monoxide conversion, and deposited on pretreated substrates to form uniform and consistent (6,5) HiPCO SWCNT thin film using solution process. The (6,5) HiPCO SWCNT thin films were characterized as pure semiconductor without metallic impurities showing classic nonlinear current-bias curves in Schottky-type diodes. Both N-type and P-type (6,5) HiPCO SWCNT TFTs were fabricated with femto Ampere off-current and ION/IOFF ratio of 108 by depositing SiNx and HfO2 dielectrics on the top of (6,5) HiPCO SWCNT thin films, respectively. The (6,5) HiPCO SWCNT inverter with voltage gain of 52 was also demonstrated by wire-bonding one P-type HiPCO SWCNT TFT to one N-type HiPCO SWCNT TFT.

Keywords

devicesmicroelectronicsnanoscale
Type
Articles
Information
MRS Advances , Volume 2 , Issue 2: Nanomaterials , 2017 , pp. 83 - 88
Copyright
Copyright © Materials Research Society 2017 

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