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The Effect of Growth Temperature on Atomic Ordering in Gao.5 2Ino.48P Epilayers Grown on GaAs (001) Substrates by GS-MBE

Published online by Cambridge University Press:  10 February 2011

C. Meenakarn ,
A. E. Staton-Bevan ,
M. D. Dawson ,
G. Duggan ,
A. H. Kean  and
S. P. Najda
C. Meenakarn
Affiliation:
Department of Materials, Imperial College of Science, Technology and Medicine, Prince Consort Road, London SW7 2BP, UK.
A. E. Staton-Bevan
Affiliation:
Department of Materials, Imperial College of Science, Technology and Medicine, Prince Consort Road, London SW7 2BP, UK.
M. D. Dawson
Affiliation:
Sharp Laboratories of Europe Ltd, Edmund Halley Road, Oxford Science Park, Oxford OX4 4GA, UK.
G. Duggan
Affiliation:
Sharp Laboratories of Europe Ltd, Edmund Halley Road, Oxford Science Park, Oxford OX4 4GA, UK.
A. H. Kean
Affiliation:
Sharp Laboratories of Europe Ltd, Edmund Halley Road, Oxford Science Park, Oxford OX4 4GA, UK.
S. P. Najda
Affiliation:
Sharp Laboratories of Europe Ltd, Edmund Halley Road, Oxford Science Park, Oxford OX4 4GA, UK.
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Abstract

A Transmission Electron Microscopy (TEM), Photoluminescence (PL) and Photoluminescence Excitation Spectroscopy (PLE) investigation has been conducted on Ga0 52In0.48P epilayers, grown on GaAs(001) by Gas-Source Molecular Beam Epitaxy. Selected area diffraction in the TEM shows that epilayers grown at temperatures between 480°C and 535°C exhibit CuPt-type ordering with the antiphase domain size increasing with increasing growth temperature. PLE data shows that, in the temperature range 480°C to 535°C the band gap energy of Ga0.52In0-48P epilayers increases with increasing growth temperature from 1.971 to 2.003 (±0.001 eV). For high band gap optical data storage applications these values compare well with the highest band gap energies reported for epilayers grown by MOCVD.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 441: Thin Films – Structure and Morphology , 1996 , 21
Copyright
Copyright © Materials Research Society 1997

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