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Solution-Processed High-Voltage Organic Thin Film Transistor

Published online by Cambridge University Press:  16 May 2017

Andy Shih  and
Akintunde Ibitayo Akinwande
Andy Shih*
Affiliation:
Electrical Engineering and Computer Science Department, Microsystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge, MA02141, U.S.A
Akintunde Ibitayo Akinwande
Affiliation:
Electrical Engineering and Computer Science Department, Microsystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge, MA02141, U.S.A
*
*(Email: ashih@mit.edu)
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Abstract

A 6,13-Bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene) based high-voltage organic thin film transistor (HVOTFT) has been demonstrated via a low temperature (< 100°C) solution-processed fabrication method on borosilicate glass. High-voltage is an area not well developed in the organic transistor field and can be of benefit to various applications requiring such an operating range beyond that of conventional thin film transistors. Here, our HVOTFT exhibited a mobility μ of 0.005 cm2 V-1 s-1 and a breakdown voltage of VDS > 120 V, the latter being due a space-charge limiting device architecture in which the channel is partially gated. Non-saturating I-V characteristic behavior was observed. This is in contrast with our vacuum-deposited pentacene HVOTFTs which exhibited breakdown voltages of VDS > 400 V. TIPS-pentacene was grown via a drop-casting deposition, with its crystallinity and grain size deduced under XRD and SEM analysis. The HVOTFT was fabricated with a dielectric stack of a high-k Bi1.5Zn1Nb1.5O7 (BZN) and parylene-C.

Keywords

thin filmorganicsolution deposition
Type
Articles
Information
MRS Advances , Volume 2 , Issue 51: Electronic Devices and Materials , 2017 , pp. 2961 - 2966
Copyright
Copyright © Materials Research Society 2017 

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References

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